Method for enhancing photoluminescence signal of antimony-based superlattice material

Abstract

The invention discloses a method for enhancing a photoluminescence signal of an antimony-based superlattice material. The method comprises the steps: preprocessing a GaSb substrate to remove water vapor and organic matters; heating the GaSb substrate, and removing the oxide layer of the GaSb substrate at a high temperature; cooling the GaSb substrate, and growing a GaSb buffer layer on the GaSb substrate; heating the GaSb buffer layer and then carrying out annealing treatment; cooling the GaSb buffer layer, and growing the Sb-based superlattice material on the GaSb buffer layer by controllingthe growth temperature, the growth rate, the beam ratio and the growth interface; and growing a GaSb layer on the surface of the Sb-based superlattice material, cooling and taking out the Sb-based superlattice material. According to the invention, the photoluminescence test is carried out on the Sb-based superlattice material, so that the photoluminescence signal is greatly enhanced, the peak position of the luminescence peak is clear, the half-peak width is small, the band gap of the superlattice material can be accurately tested, the Sb-based superlattice material can be widely applied to infrared photoelectric devices, and the detection precision of the infrared photoelectric devices is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor infrared detectors, in particular to a method for enhancing photoluminescent signals of Sb-based superlattice materials. Background technique [0002] Infrared thermal imaging has the characteristics of strong anti-interference, long recognition distance, and thermal radiation detection. In recent years, it has been widely used in the fields of security, industry, medicine, and automatic driving. [0003] Infrared optoelectronic devices use a wide range of materials, metals, insulators and superconductors can be used to make infrared detectors. Among them, the special physical properties of antimony (symbol "Sb")-based superlattice materials are very suitable for the manufacture of infrared optoelectronic devices. Sb-based superlattice infrared detectors can respond to light radiation from near-infrared to short-wave infrared, medium-wave infrared, long-wave infrared and far-infrared throug...

AI Technical Summary

Problems solved by technology

However, the surface recombination of Sb-based superlattice materials is serious, which weakens the photoluminescence signal, resulting in inconspicuous photoluminescence signals, and it is difficult to determine the position of the luminescence peak and the band gap of the superlattice material.

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