IGBT trench gate arrangement structure

Abstract

The invention discloses an IGBT trench gate arrangement structure in the technical field of semiconductor devices, and aims to solve the technical problem of gate oscillation in a low-current switching-on process caused by relatively small input capacitance and Miller capacitance and non-uniform channel current distribution in the prior art. A dielectric layer and emitter metal are sequentially arranged on one surface of a substrate; a plurality of active trench gates and virtual trench gates are arranged on the surface, facing the dielectric layer, of the substrate, and two active trench gates are continuously arranged between every two adjacent virtual trench gates; a P+ contact region, a P-type well region and an N-type CS layer are sequentially arranged between every two adjacent active trench gates, and the P+ contact region is located on one side of the dielectric layer; an N+ emitter region, a P-type well region and an N-type CS layer are sequentially arranged between the activetrench gate and the virtual trench gate, and the N+ emitter region is located on one side of the dielectric layer; and each P+ contact region and each N+ emitter region are respectively conducted with the emitter metal through contact windows which are arranged on the dielectric layer and are in one-to-one correspondence with the P+ contact region and the N+ emitter region.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an IGBT trench gate arrangement structure. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) chip combines MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Junction Transistor, Bipolar Junction Transistor) ) has the advantages of high input impedance, low power consumption under voltage control, simple control circuit, high voltage resistance, and large current. With the improvement of technology, its gate structure has been upgraded from a planar structure to a trench gate structure. Compared with a planar structure, the trench gate structure eliminates the JFET effect, increases the surface carrier concentration, and improves the channel. Density is the follow-up development trend of IGBT. Among them, the arrangement s...

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Problems solved by technology

[0003] The purpose of the present invention is to provide an IGBT trench gate arrangement structure to solve the technical problems in the prior art that the input capacitance and Miller capacitance are small, and the uneven distribution of channel current leads to gate oscillation during the small current turn-on process.

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