White light QLED device, display device and preparation method
A white light and device technology, used in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of energy transfer, white light color instability, etc., to prevent energy transfer, improve stability, and film structure. stable effect
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[0037] In addition, the present invention also provides a method for preparing a white light QLED device, comprising the following steps: sequentially depositing a bottom electrode, a light emitting layer 50 and a top electrode on the substrate 10; Depositing the first quantum dot thin film layer, the intermediate layer, and the second quantum dot thin film layer sequentially; repeating the steps of depositing the intermediate layer and the second quantum dot thin film layer by solution deposition method n times; wherein, n≥0, and is an integer, each The quantum dot film layers emit different colors and can complement each other to form white light, and the middle layer 502 is a cross-linked structure. The chemical solution deposition method is a wet chemical method, which dissolves organic or inorganic salts in a common organic solvent to form a uniform and clear precursor solution, and deposits the configured precursor solution on the substrate, and then passes through Appro...
Embodiment 1
[0039] Embodiment 1 (comparative example)
[0040] The white light QLED device of this embodiment includes a substrate 10, an anode 201, a hole injection layer 30, a hole transport layer 40, a light-emitting layer 50, an electron transport layer 60, and a cathode 701 that are sequentially stacked, wherein the light-emitting layer 50 includes sequentially stacked Yellow light quantum dot thin film layer 501 and blue light quantum dot thin film layer 503.
[0041] The preparation method of the white light QLED device of this embodiment includes the following steps: depositing a transparent and conductive indium tin oxide anode 201 with a thickness of 50 nm on the glass substrate 10, depositing a water-soluble conductive polymer PEDOT:PSS on the anode 201, drying After film formation, anneal at 150°C for 20 minutes to form a hole injection layer 30 with a thickness of 40nm; deposit TFB ink on the hole injection layer 30, dry it in vacuum and then anneal at 230°C for 30 minutes to...
Embodiment 2
[0043] The white light QLED device of this embodiment includes a substrate 10, an anode 201, a hole injection layer 30, a hole transport layer 40, a light-emitting layer 50, an electron transport layer 60, and a cathode 701 that are sequentially stacked, wherein the light-emitting layer 50 includes sequentially stacked The yellow light quantum dot thin film layer 501, the intermediate layer 502 and the blue light quantum dot thin film layer 503.
[0044] The preparation method of the white light QLED device of this embodiment includes the following steps: depositing a transparent conductive indium tin oxide anode 201 with a thickness of 50 nm on the glass substrate 10, depositing a water-soluble conductive polymer PEDOT:PSS on the anode 201, drying After film formation, anneal at 150°C for 20 minutes to form a hole injection layer 30 with a thickness of 40nm; deposit TFB ink on the hole injection layer 30, dry it in vacuum and then anneal at 230°C for 30 minutes to form a hole ...
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