OPC method for specific graph side wave effect and through hole layer OPC processing method

A processing method, the technology of the through-hole layer, which is applied in the field of OPC processing of the through-hole layer and additional exposure graphics

Active Publication Date: 2021-04-06
HUA HONG SEMICON WUXI LTD
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an OPC method aiming at the side wave effect of a spec

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • OPC method for specific graph side wave effect and through hole layer OPC processing method
  • OPC method for specific graph side wave effect and through hole layer OPC processing method
  • OPC method for specific graph side wave effect and through hole layer OPC processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The implementation of the present invention will be described below through specific specific embodiments in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Apparently, the described embodiments are some, not all, embodiments of the present invention. Specific details are set forth in the following description in order to fully understand the present invention, but the present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be based on different viewpoints and applications. Various similar extensions and substitutions can be made by one without departing from the spirit of the invention. In addition, the technical features involved in the different embodiments of the present application described below may be combined as long as they...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an OPC method for a specific graph side wave effect, which comprises the following steps of S1, setting an exposure threshold of an OPC model, inputting a target graph, simulating light intensity distribution of the exposed target graph by utilizing the OPC model, selecting a rectangular graph of which the light intensity meets a set light intensity condition as a selected graph, and outputting the selected graph, S2, taking the two long edges of which the distance between the two long edges in the selected graph meets a set distance condition as graph edges, S3, taking the graph edge as a target graph edge, generating a scattering strip in the selected graph, and enabling the scattering strip to be parallel to the graph edge, and S4, with the target graph as a target and the scattering strips as auxiliary graphs, conducting model-based OPC correction to obtain a final OPC graph. The invention further discloses an OPC processing method for the through hole layer. The light intensity distribution is changed by adding the auxiliary patterns (scattering strips), so that the final exposure result can reach the target size, and the generation of extra exposure patterns can be avoided.

Description

technical field [0001] The present invention is related to the design of semiconductor integrated circuits, and specifically relates to an OPC method aimed at side-wave effects of specific patterns and an OPC processing method for through-hole layers, mainly aiming at additional exposure patterns formed by side-wave effects in the lithography process. Background technique [0002] In deep submicron integrated circuit manufacturing, model-based OPC processing has been widely used in different levels of lithography process. By establishing a photolithography model corrected by silicon wafer data, it is possible to predict the pattern transfer distortion that exists under specific lithography process conditions, and then make certain pattern compensation or correction according to the distortion simulated by the model, and correct the pattern. The corrected graphics are then simulated and checked to see if the target is achieved. After a certain number of iterations, the simula...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/20G06F30/392G06F30/398G06F115/06
CPCG03F7/70441G03F7/705G06F30/392G06F30/398G06F2115/06
Inventor 江志兴
Owner HUA HONG SEMICON WUXI LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap