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Integrated circuit device

A technology of integrated circuits and peripheral circuits, applied in the direction of circuits, electrical components, electric solid-state devices, etc., can solve problems such as complex operating circuits and interconnection structures

Pending Publication Date: 2021-04-09
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] With the multifunctionalization of information communication devices, there is an increasing demand for large-capacity, highly integrated IC devices including memory devices, and the size of memory cells is gradually shrinking. and electrically connected operating circuits and interconnect structures become complex

Method used

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  • Integrated circuit device
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Embodiment Construction

[0028] Embodiments will now be described more fully with reference to the accompanying drawings in which some embodiments are shown. Throughout the drawings, the same reference numerals are used to designate the same elements, and repeated descriptions thereof will be omitted.

[0029] figure 1 is a block diagram of an integrated circuit (IC) device 10 according to an embodiment.

[0030] refer to figure 1 , the IC device 10 may include a memory cell array 20 and a peripheral circuit 30 . The memory cell array 20 may include a plurality of memory cell blocks BLK1, BLK2, . . . , and BLKn. Each of the plurality of memory cell blocks BLK1, BLK2, . . . , and BLKn may include a plurality of memory cells. The memory cell blocks BLK1, BLK2, . . . ) and a ground selection line GSL (for example, a plurality of ground selection lines) are connected to the peripheral circuit 30 .

[0031] Peripheral circuitry 30 may include row decoder 32 , page buffer 34 , data input / output (I / O) ...

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PUM

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Abstract

An integrated circuit device includes a peripheral circuit structure, a memory stack including a plurality of gate lines overlapping the peripheral circuit structure in a vertical direction on the peripheral circuit structure, an upper substrate between the peripheral circuit structure and the memory stack, the upper substrate including a through hole positioned below a memory cell region of the memory stack, a word line cut region extending lengthwise in a first lateral direction across the memory stack and the through hole, and a common source line located in the word line cut region, the common source line including a first portion extending lengthwise in the first lateral direction on the upper substrate and a second portion integrally connected to the first portion, the second portion penetrating the upper substrate through the through hole from an upper portion of the upper substrate and extending into the peripheral circuit structure.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority from Korean Patent Application No. 10-2019-0117491 filed with the Korean Intellectual Property Office on September 24, 2019, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The present inventive concept relates to an integrated circuit (IC) device, and more particularly, to an IC device including a non- [0004] IC devices for volatile memory devices. Background technique [0005] With the multifunctionalization of information communication devices, there is an increasing demand for large-capacity, high-integration IC devices including memory devices, and the size of memory cells is gradually reduced. Operational circuits and interconnection structures for electrical connections become complex. Accordingly, there is a need for an IC device including a memory device, the IC [0006] The device is configured to increa...

Claims

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Application Information

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IPC IPC(8): H01L27/11514H01L27/11521H01L27/11526H01L27/11563H01L27/11568H01L27/11573
CPCH10B53/20H10B41/40H10B43/00H10B41/30H10B43/40H10B43/30H10B43/10H10B43/27H01L29/788H01L29/66825H01L29/42324H10B41/41H10B41/49H10B41/35H01L21/76895H01L23/535H01L21/76805H10B41/10H10B41/27H10B43/35
Inventor 金灿镐边大锡姜东求
Owner SAMSUNG ELECTRONICS CO LTD