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Photoelectric device micro-area photocurrent/reflection image feature extraction and analysis method

A reflective image and optoelectronic device technology, which is applied in image analysis, image data processing, instruments, etc., can solve the problem that the influence of micro-nano structure is difficult to directly characterize

Active Publication Date: 2021-04-20
SOUTHEAST UNIV
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Problems solved by technology

[0013] Technical problem: The purpose of this invention is to solve the problem that the influence of micro-nano structure on the electrical aspects of optoelectronic devices is difficult to directly characterize, and propose a post-processing method for micro-region photocurrent / reflection image, and calculate the micro-nano structure from the image. Electrical influence factor, used to measure the impact of micro-nano structure on the electrical aspects of optoelectronic devices

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  • Photoelectric device micro-area photocurrent/reflection image feature extraction and analysis method

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Embodiment Construction

[0032] The present invention is further described below in conjunction with accompanying drawing.

[0033] The present invention proposes a photoelectric device micro-region photocurrent / reflection image feature extraction and analysis method, and the specific steps include:

[0034] Step 1: extract the photoelectric current image and reflection image of the planar cell area (no micro-nano structure) and the micro-nano structure area on the surface of the optoelectronic device respectively;

[0035] Step 2: The photocurrent / reflection image obtained in step 1 is subjected to background transformation to obtain the transformed photocurrent / reflection image: the photocurrent and reflected light scanning values ​​of the micro-nano structure area are respectively subtracted from the planar battery area ( No micro-nano structure) photocurrent and reflected light scanning value, to obtain photocurrent change image ΔI(x,y) and reflected light change image ΔR(x,y);

[0036] Step 3: C...

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Abstract

The invention discloses a photoelectric device micro-area photocurrent / reflection image feature extraction and analysis method. The method specifically comprises the steps of respectively extracting a photocurrent image and a reflection image of a non-micro-nano structure area and a micro-nano structure area of a planar battery area on the surface of a photoelectric device; performing background removal transformation on the photocurrent image and the reflection image to obtain a transformed photocurrent image and a transformed reflection image; respectively carrying out feature extraction on the converted photocurrent image and reflection image, and establishing a relationship between features of the photocurrent image and the reflection image; and extracting an electrical influence factor according to the image features to quantitatively calculate the influence of introduction of the micro-nano structure on the electrical performance of the device. According to the method, the contribution of the micro-nano structure to the optical and electrical aspects of the device can be measured, and the method is of great significance to research, development and optimization of photoelectric devices.

Description

technical field [0001] The invention specifically relates to a post-processing method for photoelectric current / reflection image in a micro-region of an optoelectronic device, and belongs to the field of optoelectronic device testing and research. Background technique [0002] With the rapid development of nanoscience and micro-nano processing technology, the research on optoelectronic devices based on semiconductor nanomaterials has developed rapidly. need. Establishing a new micro-region characterization method and exploring the relationship between microstructure and photoelectric performance are of great significance for the design of new materials and the optimization of the device fabrication process. [0003] Laser beam-induced photocurrent imaging or scanning photocurrent spectroscopy is an effective method to study the photoelectric conversion mechanism at the micro-nano scale. In this technology, an optical microscope objective lens (or lens group) is usually used...

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Application Information

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IPC IPC(8): G06K9/46G06K9/34G06T7/194G06T7/62
Inventor 张彤周佩吕磊苏丹
Owner SOUTHEAST UNIV