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BTO/NZFO multiphase multiferroic film with (111) oriented growth NZFO crystalline phase column array and preparation method

A technology of multiferroic thin film and pillar array, which is applied in the manufacture/processing of electromagnetic devices, material selection, etc., and can solve problems such as complex preparation conditions and poor magnetoelectric coupling performance

Active Publication Date: 2021-04-27
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a traditional sol-gel method and not based on a specific And expensive single crystal substrates are prepared by in-situ formation of epitaxial orientation to prepare BaTiO with (111) oriented NZFO single crystal phase column random distribution array and high magnetoelectric coupling performance 3 / Ni 0.5 Zn 0.5 Fe 2 o 4 Composite film material

Method used

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  • BTO/NZFO multiphase multiferroic film with (111) oriented growth NZFO crystalline phase column array and preparation method
  • BTO/NZFO multiphase multiferroic film with (111) oriented growth NZFO crystalline phase column array and preparation method
  • BTO/NZFO multiphase multiferroic film with (111) oriented growth NZFO crystalline phase column array and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Step 1, take 0.001mol of barium acetate powder and dissolve it in 15mL of ethylene glycol, and magnetically stir for 1h to obtain a transparent Ba sol precursor (1);

[0043] Step 2, take 0.001mol of tetrabutyl titanate and dissolve it in 10ml of ethylene glycol, and add 0.001mol of acetylacetone dropwise, and magnetically stir for 1h to obtain a transparent Ti sol precursor (2);

[0044] Step 3, adding the Ba sol precursor (1) to the Ti sol precursor (2), and magnetic stirring for 3 hours to obtain the BTO sol (3);

[0045] Step 4, take 0.009mol of nickel nitrate hexahydrate powder, 0.009mol of zinc nitrate hexahydrate, 0.009mol of ferric nitrate nonahydrate, and 0.018mol of citric acid monohydrate, dissolve them in 25ml of ethylene glycol, stir magnetically for 3 hours, and obtain NZFO sol (4); step 5, add BTO sol (3) to NZFO sol (4), and magnetically stir for 3 hours to obtain a composite sol with a phase composition ratio of BTO / NZFO=1 / 9; then seal and stand at room...

Embodiment 2

[0056] Step 1, take 0.002mol of barium acetate powder and dissolve it in 15mL of ethylene glycol, and magnetically stir for 1h to obtain a transparent Ba sol precursor (1);

[0057] Step 2, take 0.002mol of tetrabutyl titanate and dissolve it in 10ml of ethylene glycol, and add 0.002mol of acetylacetone dropwise, and magnetically stir for 1h to obtain a transparent Ti sol precursor (2);

[0058] Step 3, adding the Ba sol precursor (1) to the Ti sol precursor (2), stirring magnetically for 4 hours to obtain the BTO sol (3);

[0059] Step 4, take 0.008mol of nickel nitrate hexahydrate powder, 0.008mol of zinc nitrate hexahydrate, 0.008mol of ferric nitrate nonahydrate, and 0.016mol of citric acid monohydrate, dissolve them in every 25ml of ethylene glycol, and stir magnetically for 4 hours. Obtain NZFO sol (4);

[0060] Step 5, adding the BTO sol (3) into the NZFO sol (4), and magnetic stirring for 4 hours. Among them, the relative addition amount of BTO sol (3) and NZFO sol (...

Embodiment 3

[0072] Step 1, take 0.003mol of barium acetate powder and dissolve it in 15mL of ethylene glycol, and magnetically stir for 2h to obtain a transparent Ba sol precursor (1);

[0073] Step 2, take 0.003 mol of tetrabutyl titanate and dissolve it in 10 ml of ethylene glycol, and add 0.003 mol of acetylacetone dropwise, and magnetically stir for 2 hours to obtain a transparent Ti sol precursor (2);

[0074] Step 3, adding the Ba sol precursor (1) to the Ti sol precursor (2), and magnetic stirring for 5 hours to obtain the BTO sol (3);

[0075]Step 4, take 0.007mol of nickel nitrate hexahydrate powder, 0.007mol of zinc nitrate hexahydrate, 0.007mol of ferric nitrate nonahydrate, and 0.014mol of citric acid monohydrate, dissolve them in 25ml of ethylene glycol, stir magnetically for 5 hours, and obtain NZFO sol (4); step 5, adding BTO sol (3) into NZFO sol (4), and magnetic stirring for 5 hours. Among them, the relative addition amount of BTO sol (3) and NZFO sol (4) is controlled,...

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Abstract

The invention discloses a BTO / NZFO multiphase multiferroic film with (111) orientation NZFO crystalline phase column array distribution. The BTO / NZFO multiphase multiferroic film is prepared by the following steps: preparing a sol precursor by a sol-gel method, preparing a first layer of film on a monocrystalline silicon substrate by a spin-coating method, carrying out ultraviolet ozone pretreatment, controlling the deposition thickness of the first-layer film and carrying out heat treatment at high temperature in a rapid heating furnace to realize the processes of phase splitting, heterogeneous nucleation and the like in the first-layer film, carrying out in-situ preparation of an induction film layer with a two-phase separation structure, NZFO crystallization and (111) orientation, carrying out multi-step repeated spin-coating heat treatment to obtain a complex-phase film, and covering the complex-phase film with a BTO pure-phase film to fill the space between the NZFO crystal phase columns. According to the invention, the in-situ formation of the BTO / NZFO complex-phase film material 1-3 type microstructures is successfully realized, and the material has a very high magnetoelectric coupling effect; and under the action of an external magnetic field, 40% of magnetization mutation is obtained at the Curie point of a ferroelectric phase BTO, and the method has important significance.

Description

technical field [0001] The invention belongs to the field of multiferroic thin film materials, and relates to a method for preparing a multiphase multiferroic thin film, in particular to a sol-gel method that controls two-dimensional phase separation through a combination of an extremely thin film layer and interface energy and has (111) orientation growth NZFO Type 1-3 microstructure BaTiO with crystal column array 3 / Ni 0.5 Zn 0.5 Fe 2 o 4 Composite multiferroic thin film and its preparation method. Background technique [0002] With the rapid development of the information age, the development of a new generation of miniaturized and multifunctional electromagnetic sensing devices is of great significance and has been paid more and more attention. The multiferroic magnetoelectric material has ferroelectric and ferromagnetic properties at the same time, and on this basis has magnetoelectric coupling properties, that is, the change of the magnetic properties of the mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/10H01L43/12H10N50/01
CPCH10N50/01H10N50/85
Inventor 杜丕一田薇李谷尧吕爽王宗荣马宁
Owner ZHEJIANG UNIV