Composite preparation method of high-density coating
A coating and dense technology, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of substrate material damage, unrealistic, low preparation rate, etc.
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Embodiment 1
[0021] (1) Place the substrate in the reaction chamber and evacuate the reaction chamber to 1×10 -3 Pa;
[0022] (2) Heating the substrate to 700°C and maintaining it;
[0023] (3) Iridium (Ir) coatings were prepared using atomic layer deposition technology, and the two precursors were iridium acetylacetonate (Ir(acac) 3 ) and oxygen (O 2 ), the coating thickness is 0.1 μm;
[0024] (4) Utilize chemical vapor deposition technology to prepare iridium (Ir) coating, the preparation source gas is iridium acetylacetonate (Ir(acac) 3 ), the coating thickness is 2 μm;
[0025] (5) Alternately repeat the above steps (3) and (4), wherein step (3) is repeated 51 times, and step (4) is repeated 50 times.
Embodiment 2
[0027] (1) Place the substrate in the reaction chamber, and evacuate the reaction chamber to 2×10 -3 Pa;
[0028] (2) Heating the substrate to 600°C and maintaining it;
[0029] (3) Using atomic layer deposition technology to prepare hafnium oxide (HfO 2 ) coating, the two precursors are hafnium tert-butoxide (Hf(t-BuO) 4 ) and oxygen (O 2 ), the coating thickness is 0.05μm;
[0030] (4) Preparation of hafnium oxide (HfO 2 ) coating, the preparation source gas is hafnium tert-butoxide (Hf(t-BuO) 4 ) and oxygen (O 2 ), the coating thickness is 2 μm;
[0031] (5) Alternately repeat the above steps (3) and (4), wherein step (3) is repeated 51 times, and step (4) is repeated 50 times.
Embodiment 3
[0033] (1) Place the substrate in the reaction chamber, and evacuate the reaction chamber to 4×10 -3 Pa;
[0034] (2) Heating the substrate to 700°C and maintaining it;
[0035] (3) Iridium (Ir) coatings were prepared using atomic layer deposition technology, and the two precursors were iridium acetylacetonate (Ir(acac) 3 ) and hydrogen (H 2 ), the coating thickness is 0.1 μm;
[0036] (4) Utilize chemical vapor deposition technology to prepare iridium (Ir) coating, the preparation source gas is iridium acetylacetonate (Ir(acac) 3 ), the coating thickness is 2.5 μm;
[0037] (5) Alternately repeat the above steps (3) and (4), wherein step (3) is repeated 41 times, and step (4) is repeated 40 times.
[0038] The present invention combines the two technologies of atomic layer deposition and chemical vapor deposition, and uses the two technologies to alternately prepare the coating, and can utilize the high density of the atomic layer deposition coating to realize the elimin...
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