Silicon carbide single crystal growth method

Abstract

The invention relates to a growth method of silicon carbide single crystals. The method comprises the following steps: carrying out primary heat treatment on silicon carbide powder, adding a certain amount of silicon powder, carrying out secondary heat treatment, and carrying out silicon carbide single crystal growth by using silicon / silicon carbide powder as a source material. The method is characterized in that silicon / silicon carbide powder is subjected to heat treatment, so that the proportion of silicon is effectively increased, and the nitrogen doping concentration of the silicon carbide single crystal is further increased.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for growing a silicon carbide single crystal. Background technique [0002] Silicon carbide single crystal is a suitable material for realizing high-power, high-frequency and high-temperature devices. Controlling the doping concentration of silicon carbide single crystal and epitaxial layer growth is very important for carbon carbide semiconductor devices. Carbon carbide substrates with high crystalline quality and high conductivity are one of the most important prerequisites for low-resistivity applications in power electronics and optoelectronic devices. [0003] At present, silicon carbide single crystals are generally grown by sublimation methods, and nitrogen-doped 6H-silicon carbide single crystals are completed by adjusting the change of nitrogen flow rate. Studies have proved that the nitrogen concentration in the carbon crystal plane of silicon carbide cry...

AI Technical Summary

Problems solved by technology

However, for the growth of silicon carbide crystals on the silicon surface, after the silicon atoms are detached from the initial surface of the silicon and then added back to the original position, the carbon atoms detached from the surface are difficult to fill back to the original position again, so the carbon replaced by nitrogen atoms underutilized

Images