Preparation method of groove type power device
A power device, trench technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as short circuit, device short circuit, affecting device reliability, etc., to avoid short circuit and improve reliability. Effect
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[0031]figure 2 A flow chart of the preparation method of the trench type power device provided in this embodiment,Figure 3A ~ 3E A structural diagram of each step in the preparation method of the trench type power device provided in this embodiment. This embodiment provides a method of preparing a trench type power device to improve the reliability of the device, please refer tofigure 2 ,include:
[0032]Step S1: Provides a substrate, the substrate includes a device cell region and an electrode connection zone, forming an ONO layer on a substrate;
[0033]Step S2: The etching substrate is formed to form a number of first trenches in the device unit region and a number of second trenches in the electrode connection area;
[0034]Step S3: Form a first dielectric layer on the inner wall of the first trench and the second trench;
[0035]Step S4: The shield gate layer and the electrode connection layer are formed on the first dielectric layer in the first trench and the second trench, and the shiel...
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