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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing

Pending Publication Date: 2021-05-04
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Scaling (alone and in combination with new and different materials) also creates challenges that previous generations of ICs may not have encountered at larger geometries

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0063] Example 1. A method of fabricating a semiconductor device comprising: forming an opening in a first dielectric layer, wherein an underlying region below the first dielectric layer is exposed to the opening; depositing a dummy layer extending into the opening a silicon layer; depositing an isolation layer, wherein the isolation layer and the dummy silicon layer respectively comprise a dummy silicon ring and an isolation ring in the opening; filling the opening with a metal region, wherein the metal region is covered by the surrounding an isolation ring; etching the dummy silicon layer to form an air spacer; and forming a second dielectric layer to seal the air spacer.

example 2

[0064] Example 2. The method of example 1, wherein etching the dummy silicon layer is performed using a method comprising hydrogen (H 2 ) and nitrogen trifluoride (NF 3 ) process gas to perform.

example 3

[0065] Example 3. The method of example 2, wherein H 2 The first flow rate and NF 3 The ratio of the second flow rate is higher than 41.

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Abstract

Disclosed are a semiconductor device and a manufacturing method thereof. The method includes forming an opening in a first dielectric layer. A region underlying the first dielectric layer is exposed to the opening. The method further includes depositing a dummy silicon layer extending into the opening, and depositing an isolation layer. The isolation layer and the dummy layer include a dummy silicon ring and an isolation ring, respectively, in the opening. The opening is filled with a metallic region, and the metal region is encircled by the isolation ring. The dummy silicon layer is etched to form an air spacer. A second dielectric layer is formed to seal the air spacer.

Description

technical field [0001] The present disclosure relates to semiconductor devices and methods of manufacturing the same. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (eg, the number of interconnected devices per unit chip area) typically increases, while geometry size (eg, the smallest component (or line) that can be produced using a fabrication process) decreases. This downscaling process often provides benefits through increased production efficiency and reduced associated costs. [0003] As devices shrink, manufacturers are using new and different materials and / or combinations of materials to facilitate device shrinking. Scaling (alone and in combination with new and different materials) a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/8234
CPCH01L21/7682H01L21/823431H01L21/823475H01L2221/1047H01L2221/1063H01L21/76831H01L21/76834H01L21/76897H01L21/32137H01L21/28518H01L21/764H01L29/45H01L29/4991H01L29/66795H01L29/7851
Inventor 黄侦晃谢明哲林益安魏安祺陈嘉仁
Owner TAIWAN SEMICON MFG CO LTD