Solar cell and cell module

A solar cell and electrode technology, applied in electrical components, circuits, photovoltaic power generation, etc., can solve the problems of large power drop and heat generation, and achieve the effects of less power drop, less heat generation, and reduced size of components

Active Publication Date: 2021-05-11
LONGI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a solar cell and a battery module, aiming to solve the problems of high

Method used

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  • Solar cell and cell module
  • Solar cell and cell module
  • Solar cell and cell module

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] refer to Figure 4 as shown, Figure 4 A schematic structural view of a fourth solar cell in an embodiment of the present invention is shown. Figure 4 The middle substrate layer 1 is made of n-type single crystal silicon wafer with a doping concentration of 1×10 16 cm -3 , the thickness is 150um. The inversion layer 2 is located on the entire backlight surface of the base layer 1, and is diffused into a p-type layer by using a shallow junction process. The average depth of the inversion layer 2 is 100 nm. A first heavily doped region 3 is provided under the inversion layer 2 by ion implantation or laser technology. The doping concentration of the first heavily doped region 3 is 1×10 18 cm -3 . Along the direction away from the base layer 1, the thickness difference between the inversion layer 2 and the first heavily doped region 3 is 10 nm.

Embodiment 2

[0049] refer to figure 2 As shown, the base layer 1 is made of n-type single crystal silicon wafer with a doping concentration of 1×10 16 cm -3 , the thickness is 150um. Both the light facing surface and the backlighting surface of the base layer 1 are of suede structure.

[0050] The inversion layer 2 is located on the entire light-facing surface of the base layer 1, and is diffused into a p-type layer by using a shallow junction process. The average depth of the inversion layer 2 is 700nm.

[0051] A first heavily doped region 3 is provided in the inversion layer 2 by laser technology. The doping concentration of the first heavily doped region 3 is 1×10 18 cm -3 , along the direction away from the base layer 1, the thickness difference between the inversion layer 2 and the first heavily doped region 3 is 50 nm.

Embodiment 3

[0053] refer to image 3 As shown, the base layer 1 adopts n-type single crystal silicon wafer, and the doping concentration is 0.5×10 16 cm -3 , with a thickness of 100um. The smooth surface of the base layer 1 is a suede structure, which may have a front surface field.

[0054] The inversion layer 2 is located in a local area of ​​the backlight surface of the base layer 1, and is diffused into a p-type layer by using a shallow junction process. The average depth of the inversion layer 2 is 100nm.

[0055] On the backlight surface of the base layer 1 , except for the rest of the inversion layer 2 , a second heavily doped region 8 is provided. The second heavily doped region 8 is n-type doped, and the doping concentration is higher than that of the base layer 1 . A blocking structure 9 is provided between the second heavily doped region 8 and the inversion layer 2 , and the blocking structure 9 is an insulating gap or a dielectric material.

[0056] A first heavily doped ...

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Abstract

The invention provides a solar cell and a cell module, and relates to the field of photovoltaic technology. The solar cell comprises a PN junction, the PN junction is formed by a base body layer and an inversion layer, the inversion layer is provided with a first heavily doped region, and the first heavily doped region extends into the inversion layer from the side, away from the base body layer, of the inversion layer; the thickness difference between the inversion layer and the first heavily doped region is 1-100 nm in the direction away from the substrate layer; and at room temperature Tm, the first heavily doped region forms a weak degenerate or degenerate semiconductor, the rest part of the inversion layer and the matrix layer are non-degenerate semiconductors, and the weak degenerate or degenerate semiconductor is set as follows: the energy level difference between the Fermi energy level and the conduction band bottom of the n-type semiconductor or the conduction band top of the p-type semiconductor is less than 2kB * Tm. Under the condition that reverse voltage is applied, the PN junction can serve as a tunnel junction, tunnel current is formed in the PN junction, reverse conduction is achieved, and a battery string does not need to be connected with a bypass diode in parallel; when abnormity occurs, normal current is allowed to pass through the rest of the solar cells in the cell string, current loss is low, and heat is little.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a solar cell and a cell assembly. Background technique [0002] Solar cells have the characteristics of forward conduction and reverse cut-off. When a solar cell is abnormal in a solar cell, the output current of the entire solar cell string connected in series with the solar cell will be greatly affected, and it is easy to cause The battery pack is damaged. [0003] At present, the above-mentioned problems are solved by setting parallel-connected bypass diodes for the solar battery strings. However, when the bypass diode is turned on, the power drops more and the heat is more serious, which is likely to cause serious safety hazards. Contents of the invention [0004] The invention provides a solar cell and a cell assembly, aiming at solving the problems of large power drop and serious heat generation caused by parallel bypass diodes arranged in solar cell strings. [...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0236H01L31/068
CPCH01L31/068H01L31/02363H01L31/03529Y02E10/547
Inventor 吴兆徐琛李子峰解俊杰
Owner LONGI GREEN ENERGY TECH CO LTD
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