MOSFET device capable of improving anti-static capability, and manufacturing method

Abstract

The invention relates to an MOSFET device capable of improving the anti-static capability, and a manufacturing method thereof. The MOSFET device comprises gate metal for leading out a gate and source metal for leading out a source, an ESD protection structure is arranged between the gate metal and the source metal, the ESD protection structure comprises a plurality of ESD protection grooves, the plurality of ESD protection grooves are arranged in parallel around a gate PAD region, the gate is connected with a plurality of gate resistors Rg in series, the gate resistors Rg comprise gate resistor grooves, and the gate resistor grooves are arranged between the active region and the terminal protection region; and on the basis of an existing device with an ESD protection structure, the gate resistors Rg are connected to the gate in series, when the grid is impacted by strong static electricity, the Rg resistors enable the static electricity to flow to a polycrystalline silicon diode loop, a thin gate oxide structure of an MOS is effectively protected, and an original conventional diode protection loop (PN junction pair) plays a greater protection role, so the anti-ESD capability limit of the device is improved, and the reliability of the device is improved.

Description

technical field [0001] The invention relates to a power semiconductor device, in particular to a MOSFET device and a manufacturing method with improved antistatic capability, belonging to the technical field of power semiconductor devices. Background technique [0002] Power MOSFET devices play an important role in the modern electronics industry. With the expansion of the application range of devices, more and more people have higher requirements for the antistatic ability of devices. It can be seen from the device structure of MOSFET that there is only a thin layer of oxide layer separating the gate and source of MOSFET. This oxide layer is generally within 100nm. When the MOS device has no special structure protection, its ESD resistance is very low. , generally within 500V, in a relatively dry environment, it is far lower than the static value generated by the common human body, which can easily cause permanent damage to the device. [0003] In order to make MOSFET devi...

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Problems solved by technology

[0013] The process of this method requires 6 times of ph...

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