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Test circuit, test method and test system for transconductance parameters

A technology for testing circuits and testing methods, applied in the direction of testing, measuring electricity, and measuring electrical variables of a single semiconductor device. less safe effect

Pending Publication Date: 2021-05-25
HANGZHOU CHANGCHUAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the purpose of the present invention is to provide a test circuit, a test method and a test system for transconductance parameters, so as to alleviate the technical problems of poor safety and inflexible use of the existing test circuits for transconductance parameters

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  • Test circuit, test method and test system for transconductance parameters
  • Test circuit, test method and test system for transconductance parameters
  • Test circuit, test method and test system for transconductance parameters

Examples

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Embodiment 1

[0041] In order to facilitate the understanding of this embodiment, a test circuit for transconductance parameters disclosed in the embodiment of the present invention is firstly introduced in detail, see figure 2 A schematic structural diagram of a test circuit for transconductance parameters is shown, the test circuit for transconductance parameters includes: a voltage source, a current source, an integration unit and a differential measurement unit;

[0042] The first end of the voltage source is connected to the first pole of the voltage-controlled device to be tested, and the second end of the voltage source is grounded;

[0043] The first end of the current source is connected to the second pole of the voltage-controlled device to be tested, and the second end of the current source is grounded;

[0044] The integration unit is respectively connected to the second pole and the third pole of the voltage-controlled device to be tested, and the integration unit can form neg...

Embodiment 2

[0067] The embodiment of the present invention also provides a method for testing transconductance parameters, which is applied to the test circuit for transconductance parameters in the first embodiment above, refer to Figure 5 , the test method includes:

[0068] Step S501, when the current between the first pole and the second pole is the first current value, obtain the first voltage value measured by the differential measurement unit;

[0069] Step S502, when the current between the first pole and the second pole is a second current value, acquire a second voltage value measured by the differential measurement unit;

[0070] Step S503, calculating a transconductance parameter of the voltage-controlled device under test based on the first current value, the second current value, the first voltage value, and the second voltage value.

[0071] Specifically, according to the calculation formula of the transconductance parameter Calculating the transconductance parameter of...

Embodiment 3

[0073] The embodiment of the present invention also provides a test system for transconductance parameters. The test system includes the test circuit for transconductance parameters in the first embodiment above, and also includes: a main box, a test head, and a voltage control device to be tested;

[0074] The voltage source and current source in the test circuit are arranged on the resource board in the main box, and the resource board is connected to the test head through a test cable, and the integration unit and the differential measurement unit in the test circuit are respectively connected to the test heads, and the test heads are also connected to the voltage-controlled device under test.

[0075] The traditional test system and the test system of the present invention are compared and introduced below:

[0076] A typical semiconductor test system consists of three parts, which are the main chassis, test cables and test heads. The schematic diagram of its structure is ...

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Abstract

The invention provides a test circuit, test method and test system for transconductance parameters, and the test circuit comprises connection that a first end of a voltage source is connected with a first electrode of a to-be-tested voltage-controlled device, and a second end of the voltage source is grounded; the first end of a current source is connected with the second electrode of the to-be-tested voltage-controlled device, and the second end of the current source is grounded; the integral unit is connected with the second electrode and the third electrode of the voltage-controlled device to be tested, and negative feedback can be formed between the second electrode and the third electrode of the integral unit; the differential measurement unit is connected with the second electrode and the third electrode of the to-be-tested voltage-controlled device, and is used for detecting the voltage between the second electrode and the third electrode of the to-be-tested voltage-controlled device. In the test circuit, the integration unit is connected between the second electrode and the third electrode of the to-be-tested voltage-controlled device, the integration unit can form negative feedback, the safety of the transconductance parameter test can be improved, in addition, the voltage waveform of the third electrode in the transconductance parameter test can be debugged through the arrangement of the integration unit, and high usability is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to a testing circuit, testing method and testing system for transconductance parameters. Background technique [0002] Transconductance (marked by Gfs) is an attribute of electronic components, which refers to the ratio between the change value of the output current and the change value of the input voltage. For voltage-controlled high-power devices, such as metal-oxide For the packaging and testing of Semiconductor Field Effect Transistor (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET for short), Insulated Gate Bipolar Transistor (IGBT for short), etc., because the transconductance characterizes the amplification of the device under test Attributes are important parameters that need to be referred to in hardware design, so they are also very important test parameters. [0003] Taking the transconductance parameters tested during the packaging test of the ...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2607G01R31/2621G01R31/2608
Inventor 胡江耿霄雄钟锋浩
Owner HANGZHOU CHANGCHUAN TECH CO LTD