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Reverse conducting MOS trigger thyristor and manufacturing method thereof

A technology of thyristor and reverse conduction type, which is applied in the field of reverse conduction MOS trigger thyristor and its manufacturing, can solve the problems of limited application, and achieve the effects of reducing system complexity, saving pulse circuits and reducing costs

Inactive Publication Date: 2021-05-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, IGBT has current saturation capability, which limits its application in high power density

Method used

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  • Reverse conducting MOS trigger thyristor and manufacturing method thereof
  • Reverse conducting MOS trigger thyristor and manufacturing method thereof
  • Reverse conducting MOS trigger thyristor and manufacturing method thereof

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Embodiment Construction

[0038] The present invention is described in detail below in conjunction with accompanying drawing

[0039] The MOS trigger thyristor planar gate cell structure provided by the present invention is as follows figure 1 As shown, its MOS part provides driving current for the PNPN thyristor, and quickly triggers the entire device to be turned on within tens of nanoseconds, so that the device obtains high current capability. The anode part is composed of an N-type anode region 2, a P-type anode region 3 and an anode metal 1, which provides reverse conductivity for the device.

[0040] In the reverse conduction MCT provided by the present invention, its MOS part can be set as a trench gate and a planar gate, and the trench gate MCT cell structure is as follows Figure 11 As shown, the planar gate MTD cell structure is as figure 1 shown.

[0041] The reverse conduction type MCT provided by the present invention has the following working principles:

[0042] exist Figure 13 In ...

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Abstract

The invention relates to a semiconductor technology, in particular to a reverse conducting MOS trigger thyristor and a manufacturing method thereof. The MOS part provides driving current for the PNPN thyristor, and the whole device is quickly triggered to be started within dozens of nanoseconds, so that the device obtains high-current capability. According to the structure, the anode part is composed of the N-type anode, the P-type anode and the anode metal, and the reverse conduction capability is provided for the device. The invention provides a high-current driving device applied to the field of pulse power. Compared with a traditional MCT, the RC-MCT provided by the invention can be used in a pulse power circuit, and can play a follow current role without using a parallel diode, so that the RC-MCT has the advantages that the system complexity is reduced, the cost is reduced, and a pulse circuit is saved.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a Reverse Conducting Cathode Short MOS-Controlled Thyristor (RC-MCT for short) and a manufacturing method thereof. Background technique [0002] Power semiconductor devices, as switching devices, can be used in the fields of power electronics and power pulses. The traditional thyristor (Thyristor) has the advantages of low conduction voltage drop, large voltage capacity, and high current density, which are very suitable for application in the field of power pulses. Since the advent of the thyristor, its related products have been widely used in power pulse and other fields. However, the thyristor is driven by current control, which increases the complexity of the system, reduces the reliability, and is not conducive to the miniaturization of the pulse power system. [0003] Insulated Gate Bipolar Transistor (IGBT for short) is a device widely used in the field of power electronics. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/745H01L29/74H01L29/423H01L21/332
CPCH01L29/66363H01L29/7455H01L29/7416H01L29/42356
Inventor 陈万军袁榕蔚朱建泽刘超
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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