Design method of high-order self-energy-taking power supply of IGCT converter module

Abstract

The invention discloses a design method of a high-order self-energy-taking power supply of an IGCT converter module. The method comprises the steps of determining a power supply form in the module; determining a power supply isolation voltage; determining power supply output power; and designing a control side power supply according to the determined power supply form in the module, the power supply isolation voltage and the power supply output power. According to the method, on one hand, when a direct current capacitor applies the voltage UDC, the voltage difference value between the weak current side and any part of the module is not larger than UDC / 2, partial discharge can be avoided, the insulation interval is reduced, and module compactness is promoted; and on the other hand, the number of isolation output paths of the power supply is reduced, and the design of low cost, high reliability and miniaturization of the power supply is facilitated.

Description

technical field [0001] The invention belongs to the field of power supply design, and in particular relates to a high-level self-energy-capturing power supply design method for an IGCT converter module. Background technique [0002] In the converter scenario, due to the complex electromagnetic environment, all the weak current equipment of the module (such as device drivers, ground floors, sensors, etc.) need to be connected to a fixed potential in the module (such as the negative pole of the DC capacitor, the neutral point of the DC capacitor) as its Reference ground (hereinafter referred to as ground), and then add electromagnetic interference shielding and protection. [0003] In ICGT converter modules (such as half-bridge modules, full-bridge modules, and diode-clamped three-level modules), since the IGCT adopts an integrated gate drive design, its weak and strong current sides have complex electrical connections, and there is no isolation , will introduce the potential...

AI Technical Summary

Problems solved by technology

[0003]In ICGT converter modules (such as half-bridge modules, full-bridge modules, and diode-clamped three-level modules), since the IGCT adopts an integrated gate drive design, The weak and strong sides have complex electrical connections, without isolation, the potential of the strong side will be introduced into the weak side, and when the weak side is powered and grounded, it may cause potential conflicts and short circuits

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