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Bandgap Voltage Reference Circuit for 1/f Noise of Mems Inertial Devices

A voltage reference and inertial device technology, applied in instruments, regulating electrical variables, control/regulating systems, etc., can solve the problems of ignoring low-frequency noise of current sources, insufficient research on reference source reliability, and low threshold resolution.

Active Publication Date: 2022-04-12
北京迪浩永辉技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (1) In the prior art, the MEMS inertial device has poor zero stability and low threshold resolution caused by errors caused by processing technology, temperature deviation and 1 / f noise in the MEMS inertial device
[0008] (2) In the prior art, chopper amplifiers with low 1 / f noise are mostly used, ignoring the low-frequency noise of the current source
[0009] (3) In the existing technology, the research on the reliability of the reference source is insufficient

Method used

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  • Bandgap Voltage Reference Circuit for 1/f Noise of Mems Inertial Devices

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Embodiment Construction

[0051] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0052] Aiming at the problems existing in the prior art, the present invention provides a method, which will be described in detail below in conjunction with the accompanying drawings.

[0053] Such as Figure 2-Figure 5 As shown, the chopper stable bandgap voltage reference circuit with low 1 / f noise provided by the embodiment of the present invention includes:

[0054] It consists of a current source module, a signal modulation module, a frequency compensation module, a feedback resistor module, a chopper amplifier module and a component module.

[0055] The gate voltage of the PMOS transistor in the current source modu...

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Abstract

The invention belongs to the technical field of analog integrated circuit design, and discloses a bandgap voltage reference circuit applied to 1 / f noise of MEMS inertial devices. The bandgap voltage reference circuit consists of a current source module, a temperature sensitive module, a frequency compensation module, a proportional Composed of resistor module and chopper amplifier module. The invention modulates the signal by adding a chopper switch to the current source module and the operational amplifier module, and adds a frequency compensation module to the circuit, thereby greatly reducing the influence of 1 / f noise in the circuit and improving the closed-loop stability of the circuit. By adjusting the proportional resistance parameters reasonably, the temperature-independent voltage value can be output in the chopper amplifier. The problem of poor zero position stability and low threshold resolution of the MEMS inertial device caused by low-frequency 1 / f noise in the MEMS inertial device is solved.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuit design, in particular to a bandgap voltage reference circuit applied to 1 / f noise of MEMS inertial devices. Background technique [0002] At present, due to the influence of non-ideal factors such as temperature and process deviation, various noises often exist in actual power supplies. As the size of MEMS inertial devices continues to shrink, the impact of this noise is becoming more and more serious. For temperature drift, a common solution is to use a bandgap voltage reference circuit (Bandgap Voltage Reference Circuit) as a reference voltage circuit in the circuit, because it can provide a stable reference voltage independent of temperature. At the same time, in order to reduce the influence of operational amplifier offset voltage and noise caused by process deviation, a chopper switch () is often added to the transconductance operational amplifier (Operational Tans-conducta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
CPCG05F1/561
Inventor 王鹏
Owner 北京迪浩永辉技术有限公司