Storage and calculation integrated operation method and application of self-rectification memristor circuit
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An operation method and memristor technology, applied in the field of microelectronics, to achieve the effect of convenient operation, few components and operation steps, and high logic completeness.
Active Publication Date: 2021-06-11
HUAZHONG UNIV OF SCI & TECH
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However, research reports on the use of self-rectifying memristors
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Embodiment 1
[0084] In order to facilitate the understanding of the implementation process of this scheme, the logic flow of realizing the four-bit square root function based on the self-rectifying memristor array is introduced below; the specific operation steps of realizing the four-bit square root function logic function based on the self-rectifying memristor array are as follows, A total of three self-rectifying memristors are required, denoted as M 1 , M 2 and M 3 ;
[0085]
[0086] f 2 =F 2 (a 3 ,1,a 2 ,1)
[0087] r 1 =a 3 +a 2 =F 3 (a 3 ,0,a 2 ,1)
[0088]
[0089]
[0090] Step 1: put 1, a 2 , 0, 1 are brought into the self-rectifying memristor M 1 In the operation, that is, for M 1 The positive voltage is applied to the upper electrode, and the pressure applied to the lower electrode is the same as a 2 related, a 2 is 1, apply a forward high voltage V s ;a 2 is 0, applying 0 bias; the initial resistance of the self-rectifying memristor is set to hi...
Embodiment 2
[0104] In order to facilitate the understanding of the program implementation process, Figure 10 The flow of implementing NAND logic based on the self-rectifying memristor circuit provided for the embodiment of the present invention, the specific operation steps for implementing the NAND logic function based on the self-rectifying memristor array are as follows:
[0105] The first step: the input signal P and Q 0 Write them into the self-rectifying memristors P and Q for calculation, and the output result is recorded as Q 1 ;
[0106] Step 2: Write the output result of the first step into the self-rectifying memristor P for calculation, and the output result is recorded as Q 2 ;
[0107] Step 3: Write the output result of the second step into the self-rectifying memristor P, and write "1" into the self-rectifying memristor Q for operation, and the output result is recorded as Q 3 ; That is, to realize the input P NAND Q 0 →Q 3 logic function;
[0108] So far, two non-v...
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Abstract
The invention provides a storage and calculation integrated operation method and application of a self-rectification memristor circuit, and belongs to the field of microelectronics. The method specifically comprises the following steps: based on different logic operations, applying different control signals to a self-rectification memristor to carry out data storage and calculation so as to realize different logic functions, wherein the logic operation acquisition method is based on a single self-rectification memristor, and comprises that logic operations corresponding to current input quantities of different self-rectification memristors are acquired by utilizing a logic operation formula according to a logic scheme of four variables, namely a current resistance value state of the self-rectification memristor, voltage application conditions of an upper electrode and a lower electrode and a reading direction of the self-rectification memristor, or based on the memristor circuit, the lower electrodes of the two self-rectification memristors are connected, and 16 complete logic operations can be realized by adjusting the current resistance value states of the self-rectification memristors P and Q. According to the invention, the self-rectification memristor logic operation and storage calculation integrated architecture provides theoretical support for the self-rectification memristor logic operation and storage calculation integrated architecture.
Description
technical field [0001] The invention belongs to the field of microelectronics, and more specifically relates to a storage-computing integrated operation method and application of a self-rectifying memristor circuit. Background technique [0002] As a new type of device, memristor has the advantages of high integration density, high read and write speed, low power consumption and multi-valued computing potential. However, in the three-dimensional integrated array, the problem of leakage current makes the memristor array still face great challenges. [0003] In order to solve the problem of crosstalk in the array, two schemes have been proposed in the prior art. One is the external series rectification device of the memristor, so as to suppress the leakage current, such as 1T1R, 1S1R and 1D1R, etc.; Memristors with leakage current effect, such as self-rectifying memristors, etc. The external series rectification device reduces the integration density and increases the proces...
Claims
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