Wafer cleaning method and device for realizing same

A wafer and cleaning liquid technology, applied in liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve problems such as gate oxide life degradation, smearing effect, device failure, etc., to achieve a solution The effect of rapidly degrading gate oxide life and avoiding wafer charging problems

Active Publication Date: 2021-06-15
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

However, in the case of higher rotational speed, the friction between the cleaning brush and the cleaning liquid will inevitably charge the wafer, and this excess charge will have a cumulative effect during the post-processing and device use, affecting the reliability and stability of the device characteristics, for example, this excess charge can cause a tailing effect, and severe tailing effects can rapidly degrade the lifetime of the gate oxide, leading to device failure

Method used

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  • Wafer cleaning method and device for realizing same
  • Wafer cleaning method and device for realizing same
  • Wafer cleaning method and device for realizing same

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Embodiment Construction

[0014] The present application will be described in detail below in conjunction with the accompanying drawings, and the exemplary implementations mentioned herein are only used to explain the present application, and are not intended to limit the scope of the present application.

[0015] It should be understood that expressions such as "comprises", "comprises", "has", "comprises" and / or "comprising" in this specification are open rather than closed expressions, which mean that the stated features are present. , but does not exclude the existence of one or more other features and / or their combinations. Furthermore, when expressions such as "any of" appear after a list of listed features, they modify the entire list of features, not just the individual features in the list. The expression "and / or" includes any and all combinations of one or more of the associated listed items. In addition, when describing the embodiments of the present application, the use of "may" means "one ...

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Abstract

The invention provides a wafer cleaning method and a wafer cleaning device. The cleaning method comprises the following steps: under the condition that a wafer rotates at a first rotating speed, carrying out first cleaning treatment on the wafer by using a first cleaning liquid; and under the condition that the wafer rotates at a second rotating speed, carrying out second cleaning treatment on the wafer by using a second cleaning liquid introduced with CO2 gas,wherein the second rotating speed is smaller than the first rotating speed. According to the method, the problem of wafer electrification caused by friction between the cleaning brush and the cleaning liquids is avoided by adding the CO2 gas into the cleaning liquids and adding the cleaning step of super-slow rotating speed, and the reliability and the stability of the device are improved.

Description

technical field [0001] The present application relates to the field of integrated circuits, and more specifically, to a wafer cleaning method and a device for realizing the same. Background technique [0002] In integrated circuit technology, three-dimensional integration is a solution to improve the overall performance of devices while maintaining the advantages of existing technologies. For example, in the current integrated circuits, ultra high voltage (UHV) devices and low voltage (Low Voltage, LV) devices are often integrated together to give full play to the advantages of fast LV devices and high voltage resistance of UHV devices. , so as to realize the high-performance operation of the circuit. Three-dimensional integration of two or more wafers with the same or different functions can shorten the metal interconnection between wafers, reduce power consumption, improve heat generation and delay problems, and improve device performance while shortening the process deve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B08B3/08B08B3/10B08B3/02F26B5/08
CPCH01L21/02052B08B3/08B08B3/10B08B3/022F26B5/08
Inventor 余德钦吴永坚吴筱然杜明利
Owner YANGTZE MEMORY TECH CO LTD
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