Polishing slurry composition for shallow trench isolation process
A technology of polishing slurry and composition, which is applied in the direction of polishing composition, polishing composition containing abrasives, electrical components, etc., which can solve the problems of adverse effects on component performance and reliability, deterioration of component performance, step difference, etc., and achieve excellent Prevents sinking of the insulating film, reduces scratches, and provides excellent flatness effects
Inactive Publication Date: 2021-06-18
K C TECH
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Problems solved by technology
[0004] And, when the polishing selectivity in the STI process is too high, due to the over-polishing of the insulating film layer buried in the trench, dishing phenomenon may be caused and the performance of the device may be deteriorated.
In particular, such dishing issues can lead to step differences between the active and field regions in ultrafine components, adversely affecting device performance and reliability
Method used
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Embodiment 1
[0064] After adding 2.5% by weight of colloidal ceria polishing particles with a particle diameter of 60nm, 0.5% by weight of polyglycerol with a weight average molecular weight of 750 as a nonionic polymer, and 0.25% by weight of L-serine as a polishing modifier, prepared Polishing slurry composition for STI process with pH 4.5.
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Abstract
A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.
Description
technical field [0001] The invention relates to a polishing slurry composition for STI process. Background technique [0002] As semiconductor elements become more diverse and highly integrated, a technology capable of forming fine patterns is used, which makes the surface structure of semiconductor elements more and more complex, and the step difference of the surface film becomes larger and larger. In the process of manufacturing semiconductor elements, chemical mechanical polishing (CMP, chemical mechanical polishing) planarization technology is used to remove the step difference on a specific film formed on the substrate. For example, the CMP process is mostly used in the planarization process and the process of forming metal conductive films such as wiring, contact plugs, and contact vias. Among them, the planarization process is a process for removing the excessively formed insulating film for interlayer insulation. A process for performing insulation between an inter...
Claims
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IPC IPC(8): C09G1/02H01L21/3105
CPCC09G1/02H01L21/31053C09K3/1409C09K3/1436C09G1/16H01L21/3212
Inventor 朴光洙黄晙夏金廷润崔洛炫
Owner K C TECH