Gas phase epitaxy method
A technique of vapor phase epitaxy and epitaxy, applied in chemical instruments and methods, electrical components, gaseous chemical plating, etc.
Pending Publication Date: 2021-06-22
AZUR SPACE SOLAR POWER
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Problems solved by technology
[0005] Note also, however, that due to the reaction history there may also be additional undesired elements in the reaction chamber from previous processes
This can be problematic for producing low doped layers precisely
Method used
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[0055] figure 1 A cross-section of a reaction chamber K of a vapor phase epitaxy facility is schematically shown. A substrate S is arranged on the bottom of the reaction chamber K. Furthermore, the reaction chamber K has a gas inlet part O through which the epitaxial flow F is introduced into the reaction chamber K.
[0056] The epitaxial flow F has a carrier gas, at least one first metal-organic precursor for elements of main group III (e.g. trimethylgallium, TMGa), a second precursor for elements of main group V (e.g. arsenic Hydrogen, Arsin) and a third precursor for the n-dopant (eg silane).
[0057] The gas inlet part O has a plurality of conduits terminating in the reaction chamber K, through which a component or components of the epitaxial gas flow F are each led to the reaction chamber K.
[0058] exist figure 2 The doping is plotted in a graph as a function of the amount ratio of the elements of the V. main group and the III. main group. It is particularly clear...
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Abstract
The invention relates to a gas phase epitaxy method, comprising the following method steps: growing a III-V layer with a doping curve changing from n doping to p doping on a surface or front layer of a substrate from the gas phase of an epitaxial gas flow in a reaction chamber, the epitaxial gas stream comprises at least one carrier gas, a first precursor for the III. Main group, and at least one second precursor for the V. Main group, and is introduced into the reaction chamber, the epitaxial gas stream being introduced into the reaction chamber when the first growth height is reached. An n-doping initial value is set by means of a ratio of a first mass flow of a first precursor relative to a second mass flow of a second precursor in the epitaxial gas stream, resulting in p-doping, and by adding a third mass flow of a third precursor for an n-dopant to the epitaxial gas stream, the third mass flow and / or the ratio between the first mass flow and the second mass flow varies step by step across a transition region layer having a growth height of at least 10 [mu] m until a p-doping target value is reached.
Description
technical field [0001] The invention relates to a vapor phase epitaxy method. Background technique [0002] Various vapor phase epitaxy installations are known for the epitaxial production of semiconductor layers, for example the vapor phase epitaxy installation of the company Aixtron. [0003] What these installations have in common is that the epitaxial layer is deposited or grown from the vapor phase on the substrate introduced into the reaction chamber. For this, the reaction chamber is heated and an epitaxial gas flow is introduced into the reaction chamber. [0004] The composition of the gas flow depends on the type of layer to be grown, wherein typical precursors such as arsine and / or trimethylgallium provide the elements for the semiconductor layer to be grown and the doping of the layer is also added if necessary Precursors for dopants. The precursors are introduced into the reaction chamber by means of a carrier gas. To control the composition of the gas strea...
Claims
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IPC IPC(8): C30B25/16C30B29/40H01L21/205
CPCH01L21/2056C30B25/165C30B29/40C30B29/42C30B25/16H01L21/0262H01L21/02576H01L21/02579H01L21/02546C23C16/301C30B25/14H01L29/06
Inventor C·瓦赫特G·凯勒T·维尔茨科夫斯基D·富尔曼
Owner AZUR SPACE SOLAR POWER