Gas phase epitaxy method
A vapor phase epitaxy and epitaxy technology, applied in chemical instruments and methods, electrical components, chemically reactive gases, etc., to achieve the effect of suppressing cross-contamination
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[0059] figure 1 A cross-section of a reaction chamber K of a vapor phase epitaxy facility is schematically shown. A substrate S is arranged on the bottom of the reaction chamber K. Furthermore, the reaction chamber K has a gas inlet part O through which the epitaxial flow F is introduced into the reaction chamber K.
[0060] The epitaxial flow F has a carrier gas, at least one first metal-organic precursor for elements of main group III (e.g. trimethylgallium, TMGa), a second precursor for elements of main group V (e.g. arsenic Hydrogen, Arsin) and a third precursor for the n-dopant (eg silane).
[0061] The gas inlet part O has a plurality of conduits terminating in the reaction chamber K, through which a component or components of the epitaxial gas flow F are each led to the reaction chamber K.
[0062] exist figure 2 The doping is plotted in a graph as a function of the amount ratio of the elements of the V. main group and the III. main group. In particular, not only ...
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