Vertical cavity surface emitting laser and ion implantation method
A vertical cavity surface emission and ion implantation technology, applied in the field of VCSEL, can solve the problems of reduced life and laser optoelectronic performance, and achieve the effect of unaffected optoelectronic performance and life.
Active Publication Date: 2021-06-22
徐州仟目科技集团有限公司
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However, the existing ion implantation process is not mature, which often leads to a decrease in the photoelectric performance and lifetime of the laser.
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[0018] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0019] see figure 1 and figure 2 , the embodiment of the present invention provides a vertical cavity surface emitting laser, including N metal 1 and a substrate layer 2 located on the N metal 1, and also includes a functional layer grown on the substrate layer 2, the function The layer has an electrically insulating region, and the electrically insulating region has a B+ ion region, a He+ ion region, and an H+ ion region, and the B+ ion region, He+ ion regi...
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The invention relates to a vertical cavity surface emitting laser which comprises N metal and a substrate layer located on the N metal and further comprises a functional layer growing on the substrate layer, the functional layer is provided with an electric insulation area, and the electric insulation area is provided with a B + ion interval, a He + ion interval and an H + ion interval. The B + ion interval, the He + ion interval and the H + ion interval are sequentially arranged in the direction from the substrate layer to the N metal layer. The invention also provides an ion implantation method which is used in the processing of the vertical cavity surface emitting laser, and specifically comprises the following steps: injecting B + ions, He + ions and H + ions into the electric insulation region in sequence so as to form a B + ion region, a He + ion region and an H + ion region in the electric insulation region, the B + ion interval, the He + ion interval and the H + ion interval are sequentially arranged in the direction from the substrate layer to the N metal layer. According to the invention, B < + > ions, He < + > ions and H < + > ions are injected into the electric insulation region, so that the photoelectric property and the service life of the laser are not influenced.
Description
technical field [0001] The invention relates to the technical field of VCSEL, in particular to a vertical cavity surface emitting laser and an ion implantation method. Background technique [0002] The existing VCSEL is the English abbreviation of vertical cavity surface emitting laser. The vertical cavity surface emitting laser is mainly an ion implanted structure. Photoelectric conversion efficiency. However, the existing ion implantation process is immature, which often leads to a decrease in the photoelectric performance and lifetime of the laser. Contents of the invention [0003] The purpose of the present invention is to provide a vertical cavity surface emitting laser and an ion implantation method, which can at least solve some of the defects in the prior art. [0004] In order to achieve the above object, the embodiment of the present invention provides the following technical solution: a vertical cavity surface emitting laser, including N metal and a substrate...
Claims
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Login to View More IPC IPC(8): H01S5/183H01S5/32
CPCH01S5/183H01S5/3205
Inventor 杨旭刘哲韩春霞周璇宋云菲
Owner 徐州仟目科技集团有限公司