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A kind of preparation method and structure of LED film chip with remelting layer

A thin-film chip and thin-film technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems affecting chip yield and reliability, chip follow-up process rupture, single chip bulging, etc., to achieve low cost and improve optoelectronic performance. , the effect of simple process

Active Publication Date: 2017-03-22
NANCHANG UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The CN201110026143 patent adopts the method of multiple transfers to release the stress. This method of multiple transfers can indeed fully release the stress, but it brings some new problems, such as: the problem of chip displacement (resulting in the difficulty of complete alignment of subsequent device lithography, etc. ) and single chip bulging (leading to cracks in the subsequent process of the chip), which will affect the yield and reliability of the chip

Method used

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  • A kind of preparation method and structure of LED film chip with remelting layer
  • A kind of preparation method and structure of LED film chip with remelting layer
  • A kind of preparation method and structure of LED film chip with remelting layer

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Embodiment 1

[0053] (1): if figure 2As shown, a substrate 10 is provided on which an LED thin film 11 is grown, wherein the LED thin film 11 includes a buffer layer, an n-type layer, a light emitting layer and a p-type layer. Preferably, the substrate 10 is sapphire, and the LED thin film is an aluminum gallium indium nitrogen thin film obtained by metal chemical vapor deposition (MOCVD). In other embodiments of the present invention, the substrate 10 can also be any one of Si, SiC, GaN, GaAs or AlN, and the LED thin film 11 is not limited to the aluminum gallium indium nitrogen thin film, and can also be other Semiconductor thin films that require stress release, such as aluminum gallium indium phosphide epitaxial films on gallium arsenide substrates.

[0054] (2): As shown in FIG. 3 , a reflective contact layer 12 , a barrier layer 13 , a dilution protection layer 14 , a remelting layer 15 and a first bonding layer 16 are sequentially formed on the LED film 11 by electron beam evaporat...

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Abstract

The invention discloses a preparation method of an LED (Light-Emitting Diode) film chip with a meltback layer and a structure. The preparation method is characterized in that an LED film can be self-flattened in the melting process of the meltback layer by designing the meltback layer which is formed by low-melting-point metal below the LED film and melting the meltback layer through annealing processing after an original growing substrate is removed, so that the effect of sufficiently releasing the residual stress in the LED film is achieved, the reliability and the stability of an LED chip are improved, and the service life of the LED chip is prolonged. Meanwhile, the invention discloses a structure which is obtained from the preparation method, and the structure comprises a substrate, wherein the LED film which comprises a buffer layer, an n-type layer, a luminous layer and a P-type layer is arranged on the substrate, a reflecting contact layer, a blocking layer, a dilution protecting layer and an alloy layer are sequentially deposited on the LED film, and a base-plate front-surface protecting layer, a base plate, a base-plate back-surface protecting layer and a contact layer are arranged on the alloy layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic device manufacturing, and in particular relates to a method for preparing an LED thin film chip with a remelting layer and its structure. Background technique [0002] As a new generation of solid-state cold light source, semiconductor light-emitting diode (LED) has the advantages of high efficiency, long life, small size, and low voltage. It is an ideal energy-saving and environmental protection product. At present, LEDs have been widely used in mobile phone backlights, status indications, traffic lights, large-screen displays, outdoor lighting and other fields. With the improvement of their luminous efficiency and reliability, GaN-based LEDs for lighting are gradually entering thousands of households. [0003] At present, epitaxial growth of GaN-based LED thin films is usually carried out on heterogeneous substrates by metal-organic chemical vapor deposition (MOCVD). The ab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/005H01L33/44
Inventor 王光绪刘军林汤英文陶喜霞江风益
Owner NANCHANG UNIV
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