MOCVD reaction system

A reaction system and reaction chamber technology, which is applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of difficult control of superconducting film composition, uneven gas mixing, large reaction chamber, etc. , to improve uniformity and mixing efficiency, reduce heat loss, and reduce the effect of diffusion area

Active Publication Date: 2021-06-25
SUZHOU NEW MATERIAL INST
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  • Abstract
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Problems solved by technology

Large reaction chamber, slow gas diffusion, easy to cause uneven gas mixing, making it difficult to control the composition of the superconducting film

Method used

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Embodiment Construction

[0033] In order to better understand the above-mentioned purpose, features and advantages of the present application, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these examples are used to illustrate the present application and not limit the scope of the present application. The implementation conditions used in the examples can be further adjusted according to the conditions of specific manufacturers, and the implementation conditions not indicated are usually the conditions in routine experiments. In the following description, many specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, therefore, the protection scope of the application is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0034] In the description...

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Abstract

The invention discloses an MOCVD reaction system. The MOCVD reaction system comprises an MOCVD reaction chamber, a heating plate arranged in the MOCVD reaction chamber and a sprayer arranged above the heating plate, wherein the sprayer is provided with a spraying hole for spraying metal organic source gas towards the direction of the heating plate; and the sprayer is fixedly connected with two baffle plates which are blocked at the left side and the right side of the spraying hole separately. According to the invention, the mixing efficiency and uniformity of the metal organic source gas entering the MOCVD reaction chamber can be improved, so that the quality of a superconducting thin film is improved.

Description

technical field [0001] This application relates to a reaction system using MOCVD. Background technique [0002] MOCVD (Metal-organic Chemical Vapor Deposition) is the chemical vapor deposition of metal organic compounds. It has the advantages of large epitaxial area, strong repeatability, precise component control, high deposition rate, and large growth scale. It is widely used in semiconductors, superconductors, etc. materials etc. [0003] MOCVD technology requires the use of metal-organic sources, represented by M(TMHD)X (M=RE, Ba, Cu, etc.), and usually uses a single solution source method, that is, all M(TMHD)X organic sources are dissolved in a certain proportion. In THF (tetrahydrofuran) organic solvent, inject the solution into the evaporator, vaporize rapidly in the evaporator, and spray the metal-organic source gas through the delivery pipeline and sprayer to the lining walking on the heating plate in the MOCVD reaction chamber. on the bottom. Before the metal-o...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/46
CPCC23C16/45517C23C16/46
Inventor 田卡熊旭明林向阳迮建军蔡渊
Owner SUZHOU NEW MATERIAL INST
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