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Method for improving wafer warping

A warping and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as wafer warping, wafer scrapping, affecting the electrical performance of device manufacturing devices, etc., to improve wafer warping The effect of music

Pending Publication Date: 2021-06-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, process reasons and device characteristics may cause the wafer to warp. If the wafer warps during the manufacturing process, it will affect the subsequent device manufacturing or device electrical performance. In severe cases, the wafer will be scrapped.

Method used

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  • Method for improving wafer warping
  • Method for improving wafer warping
  • Method for improving wafer warping

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Experimental program
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Embodiment Construction

[0027] The manufacturing method of the trench type semiconductor device is to provide a substrate, form an epitaxial layer on the substrate, form several trenches in the epitaxial layer, and then manufacture device structures in the trenches. Since the trench formed in the trench type semiconductor device needs to meet a relatively deep depth, the device structure can be formed in the trench, and the subsequent process needs to form an oxide layer and fill polysilicon in the trench, the oxide layer and The polysilicon will generate a lateral force on the sidewall of the trench; and because in the layout design of the trench type semiconductor device, most of the trenches are distributed in strips and in the same direction, resulting in the oxide layer and The lateral force generated by the polysilicon on the sidewalls of several trenches is in one direction, causing the edge of the wafer to warp toward the back of the substrate.

[0028] Therefore, the present invention provid...

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Abstract

The invention provides a method for improving wafer warping, which comprises the following steps of: providing a substrate, and forming an epitaxial layer on the front surface of the substrate; forming a plurality of first grooves in the back surface of the substrate; forming a plurality of second grooves in the epitaxial layer, wherein the opening orientation of the first grooves is opposite to the opening orientation of the second grooves; and filling and forming a material layer in the first groove. According to the invention, the warping degree of the wafer can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving wafer warpage. Background technique [0002] In semiconductor devices, trenches are commonly used structures such as static sensing transistors, junction field effect transistors, MOS, and IGBT, among which static sensing transistors, junction field effect transistors, etc. need to prepare metal in the trenches as Schottky; DMOS , IGBT, etc. need to form an oxide layer through thermal oxidation in the trench, and form a gate by filling conductive polysilicon, while the drain and source are on both sides of the power device, and the current flows vertically inside the device, increasing the current density. The rated current is improved, and the on-resistance per unit area is also small. It is a very versatile power device. However, process reasons and device characteristics may cause the wafer to warp. If the wafer warps during the manufacturing pro...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/0201H01L21/02016
Inventor 朱一鸣
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP