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Semiconductor device and method for manufacturing semiconductor device

A technology for semiconductors and cooling bodies, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., and can solve problems such as the deterioration of heat dissipation characteristics of semiconductor devices.

Pending Publication Date: 2021-06-29
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to fill the warped recess with contact material, and a gap is formed in the heat dissipation path from the semiconductor device to the cooling body.
In this case, the heat dissipation characteristics of the semiconductor device deteriorate

Method used

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  • Semiconductor device and method for manufacturing semiconductor device
  • Semiconductor device and method for manufacturing semiconductor device
  • Semiconductor device and method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0031] figure 1 It is a cross-sectional view showing the structure of the semiconductor device in Embodiment 1.

[0032] The semiconductor device includes a base plate 1 , an insulating substrate 3 , a semiconductor element 4 , a case 5 , electrode terminals 6 , a packaging material 7 and a plurality of contact materials 2 .

[0033] The base plate 1 holds the insulating substrate 3 and the semiconductor element 4 on the surface thereof, and a cooling body (not shown) for cooling the semiconductor element 4 can be mounted on the back surface thereof. The base plate 1 is formed of, for example, copper, aluminum, or the like.

[0034] The insulating substrate 3 is bonded to the surface of the base plate 1 via a bonding material 8 such as solder. The insulating substrate 3 is formed of, for example, ceramics or the like.

[0035] The semiconductor element 4 is bonded to a circuit pattern 10 provided on the surface of the insulating substrate 3 via a bonding material 9 such as ...

Embodiment approach 2

[0047] A semiconductor device in Embodiment 2 will be described. Embodiment 2 is a subordinate concept of Embodiment 1, and the semiconductor device in Embodiment 2 includes each structure of the semiconductor device in Embodiment 1. In addition, descriptions of the same configuration and operations as those in Embodiment 1 are omitted.

[0048] The structure of the plurality of contact materials 2 of the semiconductor device in the second embodiment is different from that in the first embodiment. In Embodiment 2, among the plurality of contact materials 2 , the volume of the contact materials arranged on the outer peripheral side of the base plate 1 is smaller than the volume of the contact materials arranged on the central side.

[0049] Since the heat sink 12A and the four corners of the base plate 1 are fastened with the screws 13 , the surface pressure on the outer peripheral side is higher than the surface pressure on the center side of the base plate 1 . Therefore, ev...

Embodiment approach 3

[0051] A semiconductor device in Embodiment 3 will be described. Embodiment 3 is a subordinate concept of Embodiment 1, and the semiconductor device in Embodiment 3 includes each structure of the semiconductor device in Embodiment 1. In addition, descriptions of the same configurations and operations as those in Embodiment 1 or 2 are omitted.

[0052] In Embodiment 3, the plurality of contact materials 2 include two or more types of patterns different in area from each other. For example, among the plurality of contact materials 2 , the area (pattern size) of the contact material 2A at the warped concave portion 21 is larger than the area (pattern size) of the contact material 2B at the warped convex portion 22 . The pattern shape of the contact material 2 is arbitrary. The heights of these contact materials 2 may be the same or different.

[0053] When the semiconductor device is mounted on the heat sink 12A, the contact material 2 spreads between the base plate 1 and the ...

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Abstract

The invention relates to a semiconductor device and a method for manufacturing a semiconductor device. The purpose of the present invention is to provide a semiconductor device that can achieve appropriate heat dissipation characteristics even when an installation surface on which a cooling body is mounted has a warped shape. The semiconductor device includes a semiconductor element, a base plate, and a plurality of contact materials. The semiconductor element is held on the surface of the base plate, and a cooling body for cooling the semiconductor element can be mounted on the rear surface of the base plate. The plurality of contact materials are discretely arranged on the back surface of the base plate. The plurality of contact materials are used to fill gaps in a heat dissipation path between the base plate and the cooling body. Each of the plurality of contact materials has a volume based on a warped shape at the backside of the base plate. A volume of the contact material at the recessed portion of the warped shape of the plurality of contact materials is larger than a volume of the contact material at the protruding portion of the warped shape.

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background technique [0002] Cooling bodies such as heat sinks are mounted on semiconductor devices such as IGBT (Insulated Gate Bipolar Transistor) and FWD (Free Wheel Diode). Since warpage occurs on the installation surface of the semiconductor device and the installation surface of the cooling body, a gap is generated between the semiconductor device and the cooling body. In order to fill this gap, a contact material such as silicone grease is usually placed between the semiconductor device and the cooling body. Thus, a heat radiation path from the semiconductor device to the cooling body is ensured. [0003] Patent Document 1 discloses a cooling structure for a semiconductor module in which members of a heat transfer portion provided in a concave shape in the central portion of a heat sink have a higher density than members of the hea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/13H01L21/48
CPCH01L23/3677H01L23/13H01L21/4871H01L21/4882H01L23/367H01L23/3735H01L2224/49109H01L2224/48091H01L2224/73265H01L2224/48227H01L2224/32225H01L2924/00014H01L2924/00H01L23/373H01L23/3107H01L23/4334
Inventor 山下哲生增田晃一村冈宏记
Owner MITSUBISHI ELECTRIC CORP