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Method for forming copper conductor

A technology of copper wire and seed layer, applied in the field of manufacturing process of semiconductor devices, can solve problems such as large amount of substrate bending and substrate cracking, etc.

Active Publication Date: 2021-07-06
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the copper seed layer is heated from the back of the substrate, when heating, the substrate will heat up first, and then conduct heat to the copper seed layer. During this process, the temperature of the substrate rises faster, causing the substrate The amount of bending is large, and after the copper reflow process is completed, the substrate needs to be re-adsorbed by the electrostatic adsorption plate to continue the subsequent process, and the substrate is prone to cracking during re-adsorption

Method used

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  • Method for forming copper conductor

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Embodiment Construction

[0047] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some of the embodiments of the present invention but not all of them. All other embodiments obtained by those skilled in the art without creative efforts all fall within the protection scope of the present invention.

[0048] In addition, the directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., only is the direction of reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by the same referen...

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Abstract

The invention provides a method for forming a copper conductor. The method comprises the following steps: providing a substrate layer; forming an opening in the first surface of the substrate layer; forming a copper seed layer on the surface of the opening; heating the copper seed layer from the first surface of the base layer, so that the copper seed layer is agglomerated in the opening to form the copper wire, the situation that the substrate bending amount is large due to the fact that the temperature of the substrate rises too fast when the copper seed layer is heated can be avoided, and the situation that the substrate is prone to fragmentation subsequently is avoided; and thus, the productivity efficiency and the process stability in the copper wire forming process are improved.

Description

【Technical field】 [0001] The invention relates to the field of manufacturing technology of semiconductor devices, in particular to a method for forming copper wires. 【Background technique】 [0002] In the metal interconnection system of existing integrated circuits, for small-sized openings, a copper reflow process is usually used to fill them to form copper wires. selectivity to realize the opening filling process. In the prior art, before the copper reflow process, it usually includes etching and other processes. In the etching and other processes, an electrostatic adsorption plate is required to adsorb and fix the substrate to ensure the accuracy of the pattern formed by etching. However, in the copper reflow process In the process, the general process is to separate the electrostatic adsorption plate from the substrate first, and then heat the copper seed layer from the back of the substrate to realize the copper reflow process. [0003] However, in the current copper ...

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Application Information

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IPC IPC(8): H01L21/48
CPCH01L21/4846
Inventor 黄驰张育龙王永平曾海
Owner YANGTZE MEMORY TECH CO LTD
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