Array substrate, array substrate manufacturing method and display panel

Abstract

The invention discloses an array substrate, a manufacturing method of the array substrate and a display panel. The array substrate includes a substrate and a photosensitive element. The photosensitive element is arranged on the substrate, and the photosensitive element includes a doped semiconductor layer, an intrinsic semiconductor layer and a transparent electrode layer that are stacked in sequence; wherein, the doped semiconductor layer is an N-type doped semiconductor, so The transparent electrode layer is a P-type transparent electrode, or the doped semiconductor layer is a P-type doped semiconductor, and the transparent electrode layer is an N-type transparent electrode. By improving the internal structure of the photosensitive element, the absorption of light by the incident interface of the intrinsic semiconductor layer can be enhanced, thereby enhancing the sensitivity of the photosensitive element.

Description

technical field [0001] The present invention relates to the field of display technology, and in particular, to an array substrate, a method for manufacturing the array substrate, and a display panel. Background technique [0002] With the rapid development of the panel industry, in addition to the requirements for high resolution, wide viewing angle, and low power consumption of displays, other requirements are also placed on display panels. Enriching panel functions, increasing human-computer interaction, and improving the competitiveness of display panels are one of the main development directions of display panels at present. [0003] Optical fingerprints, ambient light sensors and other photosensitive elements (sensors) are currently developing in a relatively hot direction. At present, the production process of the panel factory often uses polysilicon (poly-Si) to make the light-absorbing layer of the photosensitive sensor, but the thickness of the poly-Si photosensiti...

AI Technical Summary

Problems solved by technology

Since the P-α-Si grown by ion implantation or plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) is at the top of the incident light, far away from the junction region of the heterojunction, the electric field is weak and cannot Effective separation of photogenerated electrons and holes, seriously affecting the sensitivity of the photosensitive sensor

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