A kind of metal cr coating with nanoscale multilevel structure and preparation method thereof
A metal and coating technology, which is applied in the field of metal Cr coating with nanoscale multi-level structure and its preparation, can solve problems such as peeling and coating cracking
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[0029] A preparation method of a metal Cr coating with a nano-level structure, comprising the following steps:
[0030] Step 1, ultrasonically cleaning and drying the surface of the silicon substrate;
[0031] Specifically, one side of the silicon substrate is polished, then ultrasonically cleaned in acetone and ethanol for 10 minutes, and then dried quickly, so that the surface of the silicon substrate is clean and free of stains and dust, and the roughness is below 0.5-0.8nm.
[0032] Step 2, under high vacuum environment, utilize Ar + Ions are etched to remove impurities on the surface of the substrate,
[0033] Then, two metal Cr targets are used to carry out magnetron sputtering, and a metal Cr coating with a nanoscale hierarchical structure is deposited on the surface of the substrate.
[0034] Among them, the two metal Cr targets adopt DC power supply, the power is 200W, the target purity is not less than 99.95wt.%, the deposition pressure is 0.5-1.5Pa, the argon flow...
Embodiment 1
[0041] A method for preparing a metal Cr coating with a nanoscale multi-level structure, the preparation process is as follows:
[0042] First, the polished Si(111) substrate was ultrasonically cleaned in acetone and absolute ethanol for 10 minutes, and then dried to remove impurities on the surface of the silicon substrate; then the silicon substrate was fixed on the substrate, and mechanically automatically escorted into the Magnetron sputtering vacuum coating chamber, pumped to a vacuum of 1.0×10 -4 Etching starts below Pa, the etching power is 200W, the etching pressure is 1.0Pa, and the etching time is 5min.
[0043] Then, magnetron sputtering was carried out to deposit the metal Cr coating. Firstly, argon gas was introduced for 30 s, followed by pre-sputtering for 10 s. Two metal Cr direct current targets (purity of 99.95 wt.%) were used for co-deposition, and the deposition power was 200W. The disk rotation speed is 10r / min, the deposition pressure is 0.5Pa, the argon ...
Embodiment 2
[0047] A method for preparing a metal Cr coating with a nanoscale multi-level structure, the preparation process is as follows:
[0048] First, the polished Si(111) substrate was ultrasonically cleaned in acetone and absolute ethanol for 10 minutes, and then dried to remove impurities on the surface of the silicon substrate; then the silicon substrate was fixed on the substrate, and mechanically automatically escorted into the Magnetron sputtering vacuum coating chamber, pumped to a vacuum of 1.0×10 -4 Etching starts below Pa, the etching power is 200W, the etching pressure is 1.0Pa, and the etching time is 5min.
[0049] Then, magnetron sputtering was carried out to deposit the metal Cr coating. Firstly, argon gas was introduced for 60 s, followed by pre-sputtering for 20 s. Two metal Cr direct current targets (purity of 99.95 wt.%) were used for co-deposition, and the deposition power was 200W. The disk rotation speed is 10r / min, the deposition pressure is 1.0Pa, the argon ...
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