Radio frequency microwave high-power device test system and test method

Abstract

The invention provides a radio frequency microwave high-power device test system and test method. The system comprises a pulse generator which is used for generating periodic pulses; a microwave signal source which is used for generating a radio-frequency excitation signal according to the periodic pulse and inputting the radio-frequency excitation signal into the radio-frequency microwave high-power device; a direct-current stabilized power supply which is used for providing a constant direct-current signal; a pulse modulator which is used for modulating the constant direct-current signal into a direct-current pulse signal according to the periodic pulse and inputting the direct-current pulse signal into the radio-frequency microwave high-power device; a Hall current probe which is used for collecting direct current on the radio frequency microwave high-power device and converting the direct current into direct current voltage; and a high-precision digital multimeter which is used for measuring the direct-current voltage according to the periodic pulse. According to the radio frequency microwave high-power device test system and the test method, the direct current test of the radio frequency microwave high-power device is realized through the high-precision digital multimeter and the Hall current probe, and the test system and the test method are accurate and low in cost.

Description

technical field [0001] The invention relates to a test system and a test method, in particular to a test system and a test method for radio frequency microwave high-power devices. Background technique [0002] In recent years, with the progress and development of semiconductor technology and materials, the integration of third-generation semiconductor RF microwave power devices represented by gallium nitride (GaN) has become higher and higher, and the output power is also increasing. In order to solve the heat dissipation problem, the working method generally adopts pulse modulation. Correspondingly, the test system is required to have the ability to quickly and accurately measure all the parameters to be measured in the pulse. Therefore, there is a very urgent need and very important practical significance to develop an accurate, efficient, and highly integrated RF microwave high-power device test system. [0003] The RF microwave high-power device test system mainly incl...

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Problems solved by technology

However, the accuracy of this method is mainly affected by the accuracy of the resistor itself and the temperature change of the resistor, and the current test range is relatively limited

[0007] (3) Use a special pulse power supply to directly measure the intra-pulse current. Different pulse power supplies have huge differences in load capacity and pulse capacity, and the corresponding costs also vary a lot.

[0008] To sum up, due to technical and cost limitations, current testing solutions for RF microwave high-power devices in the prior art have problems such as inaccurate current measurement, inconvenient operation, high cost, and poor versatility.

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