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Quantum dot and preparation method and application thereof

A quantum dot and reaction technology, applied in the field of fluorescent materials, can solve the problems of poor size dispersion of quantum dots, high reactivity of P precursors, half-width of quantum dots, etc., and achieve the effect of improving particle size uniformity

Pending Publication Date: 2021-07-13
SHENZHEN PLANCK INNOVATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main reason may be that the reactivity of the P precursor is too high, so that the growth of InP quantum dots enters the Ostwald ripening stage prematurely, resulting in poor dispersion of quantum dot size.
At the same time, for InP quantum dots, it has a unique tetrahedral structure. Due to its non-spherical structure, the exciton confinement effect of excitons at different positions is very different, which will eventually lead to a wider half-peak width of quantum dots.

Method used

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  • Quantum dot and preparation method and application thereof
  • Quantum dot and preparation method and application thereof
  • Quantum dot and preparation method and application thereof

Examples

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Effect test

preparation example 1

[0058] This preparation example provides a precursor of Se, which is prepared by the following preparation method: add 5mL of TOP and 5mol of Se powder into a glass bottle, stir well until the Se powder is completely dissolved, and obtain Se. Precursor (Se-TOP).

preparation example 2

[0060] This preparation example provides a precursor of S, which is prepared by the following preparation method: add 5mL of TOP and 5mol of S powder into a glass bottle, stir well until the S powder is completely dissolved, and obtain S Precursor (S-TOP).

preparation example 3

[0062] This preparation example provides a Zn precursor, which is prepared by the following preparation method: add 6 mL of ODE and 1.5 g of zinc stearate to a glass bottle and stir for 30 minutes to obtain a Zn precursor.

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Abstract

The invention provides a quantum dot and a preparation method and application thereof. The quantum dot comprises an InP quantum dot core, a ZnSeS layer coating the surface of the InP quantum dot core and a ZnS layer coating the surface of the ZnSeS layer, wherein the InP quantum dot core is obtained through acid etching. The quantum dot is obtained through acid etching, oxide defects on the surface of the quantum dot can be removed, the quantum dot can be etched into a sphere-like structure, the particle size uniformity of the quantum dot is improved, and the InP quantum dot high in quantum efficiency and narrow in half-peak width is obtained.

Description

technical field [0001] The invention relates to the field of fluorescent materials, in particular to a quantum dot and its preparation method and application, in particular to a high-efficiency quantum dot and its preparation method and application. Background technique [0002] Quantum dots are inorganic semiconductor nanocrystals with a diameter of less than 10nm. When the particle size is smaller than or close to the exciton Bohr radius, quantum size effects will appear, that is, as the size of quantum dots gradually decreases, the spectrum of quantum dots will appear blue. shift phenomenon. The smaller the size, the more pronounced the blue shift phenomenon. Therefore, by controlling the size of quantum dots, the width of its energy gap can be adjusted conveniently, thereby controlling the color of the emitted light. [0003] At present, the preparation of II-VI quantum dots has become mature, the quantum yield can reach more than 90%, and the half-peak width is less t...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/70C09K11/88
CPCC09K11/02C09K11/883C09K11/70
Inventor 孙小卫张文达王恺
Owner SHENZHEN PLANCK INNOVATION TECH CO LTD
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