Void free low stress fill

Abstract

Provided herein are methods of depositing low stress and void free metal films in deep features and related apparatus. Embodiments of the methods include treating the sidewalls of the holes to inhibit metal deposition while leaving the feature bottom untreated. In subsequent deposition operations, metal precursor molecules diffuse to the feature bottom for deposition. The process is repeated with subsequent inhibition operations treating the remaining exposed sidewalls. By repeating inhibition and deposition operations, high quality void free fill can be achieved. This allows high temperature, low stress deposition to be performed.

Description

[0001] incorporated by reference [0002] The PCT application form is filed as part of this application at the same time as this specification. Each application from which this application claims the benefit or priority, as identified in the concurrently filed PCT application form, is hereby incorporated by reference in its entirety for all purposes. Background technique [0003] Depositing conductive materials such as tungsten films is an important part of many semiconductor manufacturing processes. These materials can be used as horizontal interconnects, vias between adjacent metal layers, contacts between metal layers and devices on silicon substrates, and high aspect ratio features. Deposition of thin films becomes a challenge as devices shrink and more complex patterned architectures are used in the industry. These challenges include depositing void-free and low-stress films. [0004] The background and contextual description included herein is provided for the purpose...

AI Technical Summary

Problems solved by technology

Deposition of thin films becomes a challenge as devices shrink and more complex patterned architectures are used in the industry

These challenges include depositing void-free and low-stress films

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