Device and method for detecting warping degree of wafer

Abstract

The invention discloses a device and method for detecting the warping degree of a wafer. The wafer is placed on a bearing device in a transmission chamber, and the detection device comprises a cross beam, a pair of distance measuring sensors, a driving device and a processor, wherein the cross beam is arranged on an upper cover of the transmission chamber, and the distance measuring sensors are arranged on the cross beam; the driving device is used for driving the cross beam to move in the horizontal direction relative to the plane where the wafer is located and driving the distance measuring sensor to move so as to detect the distance between the detection end of the distance measuring sensor and the wafer; and the processor is used for calculating the warping degree of the wafer according to the distance detected by the distance measuring sensors. According to the device for detecting the warping degree of the wafer, the driving device drives the cross beam to drive the distance measuring sensor to move so as to detect the distance between the detection end of the distance measuring sensor and the wafer, and the processor calculates the warping degree of the wafer according to the detection result so as to judge whether the wafer is warped or not, and the direct alarm and shutdown when the AWC test exceeds the deviation are avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and more specifically relates to a device and a detection method for detecting the warpage of a wafer. Background technique [0002] Chemical vapor deposition epitaxial growth is to transport the reaction gas to the reaction chamber, and react it by heating, etc., and the growth atoms are deposited on the substrate to grow a single crystal layer. When the wafer is picked up after the epitaxial process is completed, the temperature of the wafer is about 800°C. In this state, since the diameter of the 12-inch wafer is 300mm, obvious deformation and warpage will occur after the process. In the prior art, the manipulator picks up the wafer from the process chamber and transfers it to the transfer chamber. The end face of the process chamber towards which the manipulator moves is equipped with a wafer automatic centering (Active Wafer Cekterikg, AWC) detection mechanism, that is, on the left s...

AI Technical Summary

Problems solved by technology

However, the AWC sensor cannot detect the change in the height of the wafer in the vertical direction, that is, it cannot detect whether the wafer is warped. If the warped wafer enters the next transmission link, it is prone to scratches or collisions.

Moreover, when the warped wafer is detected by the AWC sensor, it is easy to cause the deviation of the detection result data to increase. In severe cases, the AWC detection alarm will be triggered, indicating that the deviation of the wafer displacement is too large. The deviation of the actual horizontal position caused by the position, or the vertical height deviation caused by the shape warping of the wafer, can only be alarmed and shut down for equipment maintenance and taking slices

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