Ultra-wideband power divider chip based on mutual inductance coupling

Abstract

The invention provides an ultra-wideband power divider chip based on mutual inductance coupling. The ultra-wideband power divider chip comprises a first-stage mutual inductance coupling coil, a first-stage RC series network, a second-stage mutual inductance coupling coil and a second-stage RC series network, wherein the first-stage mutual inductance coupling coil is formed by mutually winding two inductors; the first-stage RC series network is connected with two power division paths of the first-stage mutual inductance coupling coil; the second-stage mutual inductance coupling coil is formed by mutually winding two inductors; the second-stage RC series network is connected with two power division paths of the second-stage mutual inductance coupling coil; and the first-stage mutual-inductance coupling coil and the second-stage mutual-inductance coupling coil are connected front and back, and a tuning capacitor shared by the first-stage mutual-inductance coupling coil and the second-stage mutual-inductance coupling coil and connected to the ground is arranged at the connection point. According to the ultra-wideband power divider chip, the size of the ultra-wide-band power divider chip can be greatly reduced, and an ultra-wide working frequency band is achieved.

Description

Technical field [0001] The present invention relates to the technical field of microwave radio frequency integrated circuits, and in particular, there is an ultra-wideband power divider chip based on mutual inductance coupling. Background technique [0002] The universal integrated power integrated is more planar structure, and therefore is usually implemented in the following two ways. One is a splitter-based power-based pin-based power using a microstrip line or a stripline; the other is a power-based parameter based on an inductance and capacitance. The power divider based on distribution parameters has the characteristics of small insertion loss, so the large bandwidth can be achieved by increasing the number of levels, but this scorener chip size is large. In contrast, the layout layout is compact, so that the chip area can be greatly reduced, but the insertion loss is large. When narrowband applications are performed, the insertion loss of the collector of the collector is ...

AI Technical Summary

Problems solved by technology

For ultra-wideband power splitters with B>1.5, if lumped parameters are still used for design, in order to ensure the performance of input and output VSWR, isolation, etc., it is necessary to increase the number of stages to 3 or above. At this time, the power splitter Insertion loss typically exceeds 1.2dB, becoming unacceptable in many situations

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