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Light-receiving element, solid-state imaging device, and ranging device

A light-receiving element and pixel technology, applied in the direction of using optical devices, electrical components, measuring devices, etc., can solve the problems of insufficient separation of pixels, reduced ranging accuracy, leakage, etc.

Pending Publication Date: 2021-08-06
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the CAPD type indirect ToF sensor according to the conventional technology has a problem that pixels are not sufficiently separated, so that light reflected in a specific pixel leaks into adjacent pixels and produces color mixture, resulting in a decrease in ranging accuracy

Method used

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  • Light-receiving element, solid-state imaging device, and ranging device
  • Light-receiving element, solid-state imaging device, and ranging device
  • Light-receiving element, solid-state imaging device, and ranging device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0058] 1.1 Ranging device (ToF sensor)

[0059] 1.2 Configuration example of solid-state imaging device

[0060] 1.3 Circuit Configuration Example of Unit Pixel

[0061] 1.4 Example of readout operation of unit pixel

[0062]1.5 Example of Chip Configuration

[0063] 1.6 Example of plane layout of light receiving element

[0064] 1.7 Optical Separation Between Light-Receiving Elements

[0065] 1.8 Example of cross-sectional structure of unit pixel

[0066] 1.9 Function and effect

[0067] 1.10 Variations of pixel separation unit

[0068] 1.10.1 The first modified example

[0069] 1.10.2 The second modified example

no. 2 approach

[0071] 2.1 Example of plane layout of light receiving element

[0072] 2.2 Example of Plane Layout of Pixel Separation Section

[0073] 2.2.1 First example

[0074] 2.2.2 The second example

[0075] 2.2.3 The third example

[0076] 2.3 Function and effect

no. 3 approach

[0078] 3.1 Example of plane layout of light receiving element

[0079] 3.2 Example of Plane Layout of Pixel Separation Section

[0080] 3.2.1 First example

[0081] 3.2.2 Second example

[0082] 3.3 Function and effect

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Abstract

The purpose of the present invention is to improve the ranging accuracy. The light-receiving element according to an embodiment of the present invention comprises a semiconductor substrate (40) and grid-shaped pixel separation parts (46) for partitioning the semiconductor substrate into a plurality of pixel regions arranged in a matrix shape. Each of the pixel regions comprises: a first semiconductor region (30A) disposed on the first-surface side in the semiconductor substrate; a second semiconductor region (30B) disposed on the first-surface side in the semiconductor substrate so as to be set apart from the first semiconductor region; and a first inhibition region (501) disposed on the first-surface side in the semiconductor substrate between the first semiconductor region and the second semiconductor region, the permittivity of the first inhibition region being different from that of the semiconductor substrate.

Description

technical field [0001] The present disclosure relates to a light receiving element, a solid-state imaging device, and a distance measuring device. Background technique [0002] Conventionally, distance measuring sensors using an indirect ToF (Time of Flight: Time of Flight) method are known. In this ranging sensor, the distance to an object is measured based on signal charges obtained by emitting light from a light source with a specific phase and receiving reflected light thereof. [0003] In such distance measuring sensors using the indirect ToF method (hereinafter referred to as indirect ToF sensors), a sensor capable of quickly distributing signal charges of reflected light to different areas is essential. Accordingly, Patent Document 1 below discloses a technique of rapidly modulating a wide area in a substrate of a sensor, for example, by directly applying a voltage to the substrate of the sensor to generate a current in the substrate. This sensor is also called a cu...

Claims

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Application Information

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IPC IPC(8): H01L31/10H01L27/146
CPCG01S17/894G01S7/4816H01L27/14623H01L27/14629H01L27/1463H01L27/14627H01L31/103G01S17/08H04N25/75G01S17/931G01B11/22G01S17/46G01S17/89H01L27/14605H01L27/1461H01L27/1464H01L27/14641
Inventor 山崎武
Owner SONY SEMICON SOLUTIONS CORP