A kind of nano two-phase high-entropy alloy thin film and preparation method thereof
A high-entropy alloy, nano-phase technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, to achieve excellent wear resistance, high toughness wear resistance, improve comprehensive performance and service life. Effect
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Embodiment 1
[0032] CuNiTiNbCr nano-dual-phase high-entropy alloy thin films were prepared on 304 stainless steel and Si substrates. The preparation method is as follows:
[0033] (1) Pre-plating treatment
[0034] Put the substrate in acetone, clean it ultrasonically for 15 minutes, then clean it ultrasonically in absolute ethanol for 15 minutes, and finally take it out and dry it with nitrogen gas.
[0035] (2) Plasma glow discharge sputtering cleaning
[0036] Put the substrate treated in step (1) into the high-power pulsed magnetron sputtering chamber, the chamber is not heated, and the intrinsic vacuum is pre-pumped to 2.0×10 -3 Pa; Then, pass Ar gas with a purity greater than or equal to 99.999% into the cavity, the Ar pressure is 3.0Pa, and the substrate is applied with a negative bias of -1500V. At this time, Ar plasma is generated near the substrate, and Ar + The bombardment of the substrate was continued for 20 min under negative bias.
[0037] (3) Deposition of CuNiTiNbCr nan...
Embodiment 2
[0046] In the present embodiment, the matrix is exactly the same as that in Example 1, and CuNiTiNbCr nanometer dual-phase composite film is prepared on the surface of the matrix, and the preparation method is as follows:
[0047] (1) is identical with the step (1) in embodiment 1;
[0048] (2) same as step (2) in embodiment 1;
[0049] (3) Deposition of CuNiTiNbCr nano-dual-phase high-entropy alloy film
[0050] First, the cavity is evacuated to 1×10 -3 Pa~5×10 -3 Pa, then pass in Ar gas, keep the Ar gas flow constant, the flow rate is 40sccm, and maintain the vacuum degree at 1.0Pa by controlling the pumping speed of the vacuum pump; the average power of the five-element splicing target is 8W / cm 2 , applying 0V bias to the substrate, depositing CuNiTiNbCr nanometer dual-phase high-entropy alloy thin film on the substrate surface, the deposition time is 40min.
[0051] (4) is the same as step (4) in Example 1.
[0052] The CuNiTiNbCr nano-dual-phase high-entropy alloy ...
Embodiment 3
[0058] In the present embodiment, the matrix is exactly the same as that in Example 1, and CuNiTiNbCr nanometer dual-phase composite film is prepared on the surface of the matrix, and the preparation method is as follows:
[0059] (1) is identical with the step (1) in embodiment 1;
[0060] (2) same as step (2) in embodiment 1;
[0061] (3) Deposition of CuNiTiNbCr nano-dual-phase high-entropy alloy film
[0062] First, the cavity is evacuated to 1×10 -3 Pa~5×10 -3 Pa, then pass in Ar gas, keep the Ar gas flow constant, the flow rate is 40sccm, and maintain the vacuum degree at 2.5Pa by controlling the pumping speed of the vacuum pump; the average power of the five-element splicing target is 6W / cm 2 , apply -150V bias voltage to the substrate, deposit CuNiTiNbCr nanometer dual-phase high-entropy alloy thin film on the substrate surface, the deposition time is 40min.
[0063] (4) is the same as step (4) in Example 1.
[0064] The CuNiTiNbCr nano-dual-phase high-entropy a...
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