Photoelectric detector structure and preparation method thereof

Abstract

The invention relates to the field of semiconductor production, in particular to a photoelectric detector structure and a preparation method thereof. The photoelectric detector structure comprises a substrate, a first silicon oxide layer, a second silicon oxide layer, an aluminum oxide layer and a P-I-N stacking layer, wherein the thickness of the second silicon oxide layer is 10nm-1 [mu]m. The preparation method comprises the following steps: forming the germanium buffer layer on the substrate; forming an intrinsic semiconductor layer; forming a P-type semiconductor layer; forming an aluminum oxide layer, forming or not forming a second silicon dioxide layer, and obtaining a substrate A, wherein the thickness of the second silicon dioxide layer is 10 nm to 1 [mu]m; forming a first silicon oxide layer on the other substrate, and if the substrate A does not form the second silicon oxide layer, continuing to form the second silicon oxide layer to obtain a substrate B; bonding the substrate A and the substrate B; removing the substrate and the germanium buffer layer in the A substrate; and forming an N type semiconductor layer. The thicker double-layer silicon oxide structure is arranged below the PIN stacking structure, so that internal optical reflection of the device is enhanced, an optical resonant cavity is formed in the device, and the effect of the optical resonant cavity is enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor production, in particular to a photodetector structure and a preparation method thereof. Background technique [0002] High-performance photodetectors are the core equipment connecting optical devices and electronic devices. Their excellent photoelectric performance provides a solid foundation for efficient conversion and transmission of photoelectric signals and accurate reading of information, and provides a solid foundation for photoelectric integrated chip technology solutions. Core equipment support. [0003] Most of the traditional PIN detector structure has no optical resonance enhancement effect inside, and its responsivity needs to be improved. There are also a few detectors with a resonant cavity structure, but they usually use fine and complex Bragg mirrors, and the manufacturing process is also very complicated. [0004] For this reason, the present invention is proposed. Contents of t...

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Problems solved by technology

There are also a few detectors with a resonant cavity structure, but they usually use fine and complex Bragg mirrors, and the manufacturing process is also very complicated

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