Substrate drying chamber

Abstract

The present invention relates to a substrate drying chamber. The present invention includes: an upper housing; a lower housing which is coupled to the upper housing to be opened or closed; a sealing portion which is provided between coupling surfaces of the lower housing and the upper housing; a substrate mounting plate which is coupled to the bottom surface of the lower housing and on which a substrate having organic solvent formed thereon is mounted; an integrated supply/discharge port which extends from one side surface to the other side surface in the lower housing, and extends from a middle region between the one side surface and the other side surface towards the substrate mounting plate so as to provide a supply path for supercritical fluid for initial compression and a discharge path for supercritical fluid in which the organic solvent formed on the dried substrate is dissolved; and an upper supply port which is formed at the central region of the upper housing to face the substrate mounting plate so as to provide a supply path for supercritical fluid for drying.

Description

technical field [0001] The present invention relates to a substrate drying chamber. More specifically, the present invention relates to a technique that enables the drying process to be completed at the end of the drying process by causing symmetrical flow when supplying or discharging supercritical fluid and by uniformly distributing and supplying supercritical fluid in a chamber and discharging supercritical fluid from the chamber. And when the chamber is opened, the substrate drying efficiency is improved and particles are prevented from being introduced onto the substrate inside the chamber. Background technique [0002] A manufacturing process of a semiconductor device includes various processes such as a photolithography process, an etching process, and an ion implantation process, among others. After each process is finished and before subsequent processes are performed, a cleaning process and a drying process are performed to remove impurities and residues remaining...

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the overall structure of the device is complicated

[0013] In addition, according to related technologies including Korean Patent Laid-Open Application No. 10-2017-0137243, since the lower supply port 422 for supplying the supercritical fluid for initial pressurization and the discharge for discharging the dried supercritical fluid The port 426 is not located at the center of the lower body 420, so when the supercritical fluid is supplied and discharged, an asymmetric flow of the supercritical fluid is formed, making it difficult to evenly distribute and supply the supercritical fluid in the high pressure chamber 410 and discharge from the high pressure chamber 410 supercritical fluid

Therefore, there arises a problem that the drying efficiency decreases

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