Vertical LED chip structure and preparation method thereof

Abstract

The invention provides a vertical LED chip structure and a preparation method thereof. The preparation method comprises the steps of providing a growth substrate and forming an epitaxial layer; forming a plurality of first grooves distributed at intervals in the epitaxial layer; forming first N electrode metal layers in the first grooves; forming an N electrode insulating layer; forming a P electrode metal layer to cover the P-type GaN layer and the N electrode insulating layer; bonding the P electrode metal layer with the supporting substrate; removing the growth substrate; forming a surface insulating layer on the surface of the N-type GaN layer; forming a plurality of second grooves distributed at intervals in the surface insulating layer, wherein the N-type GaN layer is exposed out of the second grooves, and the first grooves and the second grooves correspond to each other up and down; and forming second N electrode metal layers, wherein the second grooves are filled with the second N electrode metal layers, and the second N electrode metal layers in the second grooves are electrically connected with one another. According to the invention, the chip breakdown phenomenon can be effectively reduced, the cracking phenomenon of the insulating layer can be reduced, the electric leakage phenomenon of the chip can be obviously reduced, and the stability and reliability of the chip can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to LED chips, in particular to a vertical LED chip structure and a preparation method thereof. Background technique [0002] From the structure of LED, GaN-based LED can be divided into front structure, flip structure and vertical structure. The traditional front-mounted structure LED chip has big problems in light emission and heat dissipation, and there is a phenomenon of current congestion, which limits the further improvement of its luminous efficiency and reliability, and is difficult to meet the needs of the lighting market; although the flip-chip structure LED is in the The heat dissipation of the chip has been greatly improved, but because it is still the electrode on the same side, there is still a phenomenon of current crowding, and the insulating layer on the N electrode is prone to cracks and leakage due to its large area; and the vertical structure LED chip can s...

AI Technical Summary

Problems solved by technology

However, since the front N electrode and the bottom P electrode are on both sides of the light-emitting layer, the metal contact area of ​​the N electrode and the metal area of ​​the P electrode form a direct opposite structure, which can easily form a current collision and breakdown, resulting in chip leakage

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