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Near-infrared single-photon avalanche diode detector and manufacturing method thereof

A single photon avalanche and diode technology, applied in the field of photoelectric detection, can solve the problem of low detection efficiency of near-infrared photons, achieve the effects of low dark noise, improve detection efficiency, and avoid expensive costs

Active Publication Date: 2021-08-27
武汉光迹融微科技有限公司
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Problems solved by technology

[0004] Aiming at the problem that traditional single photon avalanche diode SPAD devices have low detection efficiency for near-infrared photons, the present invention proposes a single-photon avalanche diode structure with high detection efficiency for near-infrared photons

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  • Near-infrared single-photon avalanche diode detector and manufacturing method thereof
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  • Near-infrared single-photon avalanche diode detector and manufacturing method thereof

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0038] figure 1 It is a cross-sectional view of a near-infrared single-photon avalanche diode detector (SPAD) proposed by the present invention. The near-infrared SPAD device structure provided by the present invention includes a p-type substrate (10) and an epitaxial layer (4). The device is provided with a p-type buried layer (6) in a p-type substrate (10), and a heavily doped n-type buried l...

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Abstract

The present invention discloses a near-infrared single-photon avalanche diode detector. A p-type buried layer (6) and a heavily doped n-type buried layer (2) are arranged in a p-type substrate (10), a deep avalanche region is formed by using a PN junction between the p-type buried layer (6) and the heavily doped n-type buried layer (2), and the near-infrared photon detection efficiency of an SPAD device is improved. The avalanche region is far away from the surface of the device, so that the influence of surface defects on the avalanche region is small, the dark count of the device is reduced, and the photon detection accuracy of the device is improved. The SPAD device can be used as a detection device of a near-infrared single-photon laser radar, and is applied to the fields of intelligent automobile automatic driving, face recognition, three-dimensional imaging and the like. The invention further provides a manufacturing method of the near-infrared single-photon avalanche diode detector.

Description

Technical field [0001] The invention belongs to the field of photoelectric detection technology, and more specifically, relates to a near-infrared single-photon avalanche diode detector and a manufacturing method. Background technique [0002] Silicon-based single photon avalanche diode (SPAD) has become an ideal choice for making single photon detectors because of its characteristics such as large avalanche gain, fast response speed, high detection efficiency, mature technology, small size, light weight, and low power consumption. First choice. The SPAD detector can obtain the depth information of the detected object by detecting the arrival time of the echo single photon signal. Therefore, it has been widely used in the fields of low-light signal detection and three-dimensional imaging, and has gradually become a research hotspot at home and abroad. [0003] Traditional silicon-based SPAD devices have the highest response efficiency to green and blue light, but have very ...

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Application Information

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IPC IPC(8): H01L31/107H01L31/18
CPCH01L31/107H01L31/1804Y02P70/50
Inventor 魏子琛赵昊胡晓峰严进
Owner 武汉光迹融微科技有限公司
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