Unlock instant, AI-driven research and patent intelligence for your innovation.

Assembly for reducing assembly height of crystal growing furnace and use method

A technology of crystal growth furnace and assembly height, which is applied in the direction of crystal growth, chemical instruments and methods, post-processing equipment, etc., can solve problems such as troublesome adjustment, low efficiency of crystal growth furnace, and damage to the furnace body, so as to improve assembly efficiency and ensure The effect of horizontal state and stability, and easy installation

Pending Publication Date: 2021-09-03
SHENZHEN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to overcome the low efficiency of assembling the crystal growth furnace in the prior art by using a forklift and manual cooperation, the technical problems of troublesome adjustment and easy damage to the furnace body, so as to provide a method applicable to Components that can avoid installation deviations in traditional methods and reduce the assembly height of crystal growth furnaces in a limited space and use methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Assembly for reducing assembly height of crystal growing furnace and use method
  • Assembly for reducing assembly height of crystal growing furnace and use method
  • Assembly for reducing assembly height of crystal growing furnace and use method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] see Figure 1 to Figure 4, an assembly for lowering the assembly height of a crystal growth furnace provided in this embodiment includes a load bearing plate 2 , a movable support assembly, a fixed support assembly 5 and an adjustment assembly 7 . Wherein the load-bearing plate 2 is a square load-bearing plate 2, and the middle position of its top is suitable for fixing the crystal growth furnace 1. The movable support assembly is detachably installed on the bottom of the bearing plate 2, and can drive the bearing plate 2 to carry out lifting action. The fixed support assembly 5 can be fixedly supported on the bottom of the load-bearing plate 2 when the load-bearing plate 2 and the crystal growth furnace 1 reach the designed height, and can be arranged on both sides of the movable support assembly. The movable support assembly is adapted to be removed from the bottom of the bearing plate 2 when the crystal growth furnace 1 is installed at a preset position. The adjust...

Embodiment 2

[0058] A method for using components that reduce the assembly height of a crystal growth furnace provided in this embodiment includes the following steps:

[0059] S1. Fix the load-bearing plate 2 and the load-bearing platform 6, fix the electric telescopic rod 4 and the load-bearing platform 6 and the electric telescopic rod 4 is at the shortest length;

[0060] S2. Use a forklift to move the crystal growth furnace 1 to the fixed installation part on the bearing plate 2 and fix it;

[0061] S3. Control the power unit 3 to drive the electric telescopic rod 4 to rise, and lift the crystal growth furnace 1 to a position slightly higher than the designed height;

[0062] S4. Place the elastic member 52 in the groove 50 of the grate support rod 51, place the grate support rod 51 at the preset position at the bottom of the load-bearing plate 2, control the power device 3 so that the electric telescopic rod 4 descends, and load-bearing The plate 2 is fixed to the support rod 51 of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of semiconductor crystal growth, and discloses an assembly for reducing the assembly height of a crystal growth furnace and a use method. The assembly comprises: a bearing plate, wherein the top of the bearing plate is suitable for fixing a crystal growth furnace; a movable supporting assembly installed at the bottom of the bearing plate and capable of driving the bearing plate to ascend and descend; and a set of fixed supporting assemblies, wherein the fixed supporting assemblies can be fixedly supported at the bottom of the bearing plate and arranged on the two sides of the movable supporting assembly when the bearing plate and the crystal growing furnace reach the designed height, and the movable supporting assembly is suitable for being detached from the bottom of the bearing plate when the crystal growing furnace is installed at a preset position. According to the invention, the bearing plate and the crystal growing furnace can be mounted and fixed at a lower position, then the crystal growing furnace and the bearing plate are lifted to a proper height by utilizing the movable supporting piece, and then the crystal growing furnace and the bearing plate are supported and fixed by utilizing the fixed supporting assembly, so that the mounting is more convenient, the assembly efficiency is improved, repeated mounting is not needed, and the damage to the crystal growth furnace can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal growth, in particular to a component and a use method for reducing the assembly height of a crystal growth furnace. Background technique [0002] After more than 60 years of continuous development, the development of global semiconductor materials has continuously made breakthroughs. The third-generation semiconductor materials silicon carbide (SiC) and aluminum nitride (AlN) are developing rapidly because of their wide band gap, With higher breakdown field strength and higher saturation electron drift rate, the third-generation semiconductor materials are mainly for the new generation of optoelectronic devices, in the fields of new generation communication devices, smart grids, new energy vehicles, consumer electronic devices, etc. All have a very wide range of application scenarios. Growth devices such as SiC and AlN are usually heavy crystal growth furnaces that take up a lot of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B35/00
CPCC30B35/00
Inventor 武红磊李文良金雷覃佐燕
Owner SHENZHEN UNIV