Semiconductor light-emitting element

Abstract

The invention provides a semiconductor light-emitting element, which sequentially comprises a substrate, an n-type semiconductor layer, a doped quantum well layer, an aging light attenuation control layer and a p-type semiconductor layer from bottom to top, the aging light attenuation control layer sequentially comprises a non-doped quantum well layer, a first light attenuation control layer and / or a second light attenuation control layer from bottom to top, wherein the non-doped quantum well layer is provided with at least one non-doped barrier layer. The aging light attenuation control layer is added between the doped quantum well layer and the p-type semiconductor layer, so that the probability that Si of the doped quantum well layer is in diffusion contact with Mg of the p-type semiconductor layer in the long-term aging process can be reduced, the aging light attenuation performance of the semiconductor light-emitting element, especially an ultraviolet semiconductor light-emitting element, is improved, and the light decay after aging for 1000 hours is reduced from 30% or more (even 50% or more) to 10% or less.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor light emitting element. Background technique [0002] Ultraviolet semiconductor light-emitting element, with a wavelength range of 200-300nm, the ultraviolet light emitted can interrupt the DNA or RNA of viruses and bacteria, directly kill viruses and bacteria, and can be widely used in air purification, tap water sterilization, household air conditioning sterilization, automobile Sterilization and disinfection fields such as air-conditioning sterilization. [0003] The well layer and the barrier layer of the quantum well layer of the existing ultraviolet semiconductor light-emitting element have many defects, and the quality is poor, which easily causes aging light attenuation; at the same time, the Si in the quantum well layer and the Mg in the p-type semiconductor layer If the distance is too close, it is easy to cause Mg and Si to mix due to element mi...

AI Technical Summary

Problems solved by technology

[0003] The well layer and the barrier layer of the quantum well layer of the existing ultraviolet semiconductor light-emitting element have many defects, and the quality is poor, which easily causes aging light attenuation; at the same time, the Si in the quantum well layer and the Mg in the p-type semiconductor layer If the distance is too close, it is easy to cause Mg and Si to mix due to element migration and diffusion under high temperature or long-term use, which will cause aging light attenuation phenomenon, making the aging light attenuation of 1000 hours generally more than 30%, or even more than 50%.

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