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MOCVD cavity structure, control method thereof and MOCVD reaction chamber

A cavity and gas flow channel technology, applied in the field of MOCVD cavity structure and its control method and MOCVD reaction chamber, can solve the problems of waste of research and development funds, lack of efficiency, etc., and achieve the effect of reducing production costs and improving research and development efficiency

Active Publication Date: 2021-09-17
SUZHOU JUZHEN PHOTOELECTRIC
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  • Abstract
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  • Claims
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Problems solved by technology

The use of traditional planetary MOCVD reaction chambers for the preparation of materials in the research phase is a waste of research and development funds and lacks efficiency

Method used

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  • MOCVD cavity structure, control method thereof and MOCVD reaction chamber

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Embodiment Construction

[0017] The technical solutions of the present application are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0018] Such as figure 1 As shown, this embodiment provides an MOCVD cavity structure 100 . The MOCVD cavity structure 100 includes a ceiling 1 , a graphite base 2 , a graphite disk 3 , a cover plate 4 , a first gas path 5 and a second gas path 6 .

[0019] The ceiling 1 is located on the top of the MOCVD cavity structure 100 . The ceiling 1 can be made of quartz or graphite to avoid deposition of raw materials on the ceiling 1 as much as possible.

[0020] The graphite base 2 is locat...

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Abstract

The invention relates to an MOCVD cavity structure, a control method thereof and an MOCVD reaction chamber. The MOCVD cavity structure comprises a ceiling, a graphite base, a plurality of graphite plates, a plurality of cover plates, a first gas path and a second gas path; the graphite base is located below the ceiling, a gas flow channel is formed between the ceiling and the graphite base, a plurality of grooves are formed in the upper surface of the graphite base, and gas inlets are formed in the side walls of the grooves; the plurality of graphite plates are respectively arranged in the corresponding grooves, and the gas inlets are positioned above the graphite plates; the plurality of cover plates are respectively arranged above the corresponding graphite plates in an openable and closable manner, and the corresponding graphite plates are covered when the cover plates are closed; the first gas path penetrates through the ceiling and is communicated with the gas flow channel; and the second gas path penetrates through the ceiling and is communicated with the gas inlets in the side walls of the grooves. The MOCVD cavity structure can be used for achieving growth of various epitaxial structures in one growth process, and the research and development efficiency is improved.

Description

technical field [0001] The present application relates to the field of semiconductor material preparation, in particular to an MOCVD chamber structure, a control method thereof, and an MOCVD reaction chamber. Background technique [0002] Metal organic compound chemical vapor deposition (MOCVD for short) equipment is currently the main equipment for producing semiconductor epitaxial materials, and has a wide range of applications. [0003] In the traditional planetary MOCVD reaction chamber, a graphite disk is placed in each circular recessed area of ​​the graphite base. In one growth process, the substrates on all the graphite disks can only grow the same epitaxial structure. For complex structures containing multiple layers of different materials, multiple growth processes are required during the R&D phase to grow different single-layer materials or simple structures for performance characterization. The use of traditional planetary MOCVD reaction chambers for the prepara...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/46C23C16/52
CPCC23C16/455C23C16/46C23C16/4584C23C16/52
Inventor 颜建黄勇
Owner SUZHOU JUZHEN PHOTOELECTRIC
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