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Semiconductor device

A semiconductor and device technology, applied in the structural field of high-voltage semiconductor devices, can solve problems such as transistor performance degradation, achieve the effect of reducing channel resistance and improving performance

Inactive Publication Date: 2004-01-07
NEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, increasing low concentrations of P -- The effective width of the type electric field relaxation layer 3 also increases the channel resistance of the transistor accordingly
Therefore, in order to meet the requirements related to the pass current, the volume of the transistor must be increased, which will lead to the degradation of the performance of the transistor

Method used

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Examples

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Effect test

Embodiment 1

[0023] figure 1 It is a semiconductor device, mainly composed of the following parts: P + Type drain diffusion layer 1, local Si oxide layer 2, low concentration P -- Type electric field relaxation layer 3, polysilicon gate 4, P + Type source diffusion layer 5, N - Type well diffusion layer 6, P type semiconductor substrate 7, formed in low concentration P -- Moderate concentration of P in type electric field relaxation layer 3 - Type diffusion layer 8, gate oxide film 9. where low concentrations of P -- The role of the type electric field relaxation layer 3 in the semiconductor device of the present invention is the same as that in the traditional transistor: that is, the load on the P + type drain diffusion layer 1 and P + type source diffusion layer 5 voltage between the N - Type well diffused layer 6 and P -- The depletion layer extending between the type electric field relaxation layers 3 bears. The present invention is characterized in that it provides a mediu...

Embodiment 2

[0027] figure 2 It is a semiconductor device, mainly composed of the following parts: N + Type drain diffusion layer 10, local Si oxide layer 2, low concentration N -- Type electric field relaxation layer 11, gate 3, N + Type source diffusion layer 12, P type semiconductor substrate 7, formed in low concentration N -- Moderate concentration N in type electric field relaxation layer 11 - Type diffusion layer 13, gate oxide film 9. where low concentration of N -- The role of the type electric field relaxation layer 11 in the semiconductor device of the present invention is the same as that in the traditional transistor: that is, it is loaded on the N + type drain diffusion layer 10 and N + type source diffusion layer 12 by a voltage between P - type semiconductor substrate 7 and N -- The depletion layer extending between the type electric field relaxation layers 11 bears. The present invention is characterized in that it provides a medium concentration N - Type diffus...

Embodiment 3

[0031] image 3 It is a semiconductor device, mainly composed of the following parts: P + Type drain diffusion layer 1, local Si oxide layer 2, low concentration P -- Type electric field relaxation layer 3, gate 4, P + Type source diffusion layer 5, N - Type fully diffused layer 6, oxide buried layer 21, P - Type support substrate 20, formed in low concentration P -- Moderate concentration of P in type electric field relaxation layer 3 - Type diffusion layer 8, gate oxide film 9.

[0032] where low concentrations of P -- The function of the type electric field relaxation layer 3 in the semiconductor device of the present invention is the same as that in a conventional transistor. In embodiment 3, a layer of oxide buried layer 21 is covered on the P-type support substrate, and become an insulating isolation substrate, which serves as a P-type semiconductor substrate, instead of figure 1 The P-type semiconductor substrate in Embodiment 1 is shown, and its operation is t...

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Abstract

The invention relates to a semiconductor device, including: a first conductive type semiconductor substrate; a grid; a second conductive type source and leaking diffused layer formed on the substrate at two corresponding sides of the grid; a second conductive type low concentration diffused layer, a second conductive type moderate concentration diffusion layer is further formed in the low concentration diffused layer as a relaxation layer of electric field in the semiconductor device of the invention.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a structure of a high-voltage semiconductor device. Background technique [0002] Figure 6 It is a structural cross-sectional view of a traditional high-voltage P-channel MOS field effect transistor. exist Figure 6 Among them, 7 is a P-type Si single crystal semiconductor substrate, and 6 is a low-concentration N formed on the P-type Si single crystal substrate 7. - type well diffusion layer, 1 is at low concentration N - Type well diffusion layer 6 formed on the P + type drain diffusion layer, 2 is the local oxide layer of Si, 3 is the low concentration P -- Type electric field relaxation layer, 4 is polysilicon gate, 5 is P + Type source diffusion layer, 9 is the gate oxide film. This constitutes a semiconductor device. [0003] for Figure 6 This structure, by properly adjusting the low concentration of N - Type well diffusion layer 6 and low concentration P -- The size and ...

Claims

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Application Information

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IPC IPC(8): H01L21/762H01L21/336H01L29/06H01L29/78H01L29/80
CPCH01L29/1095H01L29/7835H01L29/06
Inventor 森和久
Owner NEC CORP
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