Semiconductor device

A semiconductor and device technology, applied in the structural field of high-voltage semiconductor devices, can solve problems such as transistor performance degradation, achieve the effect of reducing channel resistance and improving performance
CN1134070CInactive Publication Date: 2004-01-07NEC CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NEC CORP
Publication Date
2004-01-07
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a semiconductor device, including: a first conductive type semiconductor substrate; a grid; a second conductive type source and leaking diffused layer formed on the substrate at two corresponding sides of the grid; a second conductive type low concentration diffused layer, a second conductive type moderate concentration diffusion layer is further formed in the low concentration diffused layer as a relaxation layer of electric field in the semiconductor device of the invention.
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Description

technical field

[0001] The invention relates to a semiconductor device, in particular to a structure of a high-voltage semiconductor device. Background technique

[0002] Figure 6 It is a structural cross-sectional view of a traditional high-voltage P-channel MOS field effect transistor. exist Figure 6 Among them, 7 is a P-type Si single crystal semiconductor substrate, and 6 is a low-concentration N formed on the P-type Si single crystal substrate 7. - type well diffusion layer, 1 is at low concentration N - Type well diffusion layer 6 formed on the P + type drain diffusion layer, 2 is the local oxide layer of Si, 3 is the low concentration P -- Type electric field relaxation layer, 4 is polysilicon gate, 5 is P + Type source diffusion layer, 9 is the gate oxide film. This constitutes a semiconductor device.

[0003] for Figure 6 This structure, by properly adjusting the low concentration of N - Type well diffusion layer 6 and low concentration P -- The size and ...

Claims

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