Trench gate field effect transistor with charge balance structure and manufacturing method thereof

Abstract

The invention relates to a trench gate field effect transistor with a charge balance structure and a manufacturing method thereof, belonging to the technical field of semiconductors. Using the manufacturing method of the present invention, a layer of N-buried region and P-buried region are buried in N-EPI, N-buried region is mainly used to reduce via resistance, and P-buried region is used to assist N-buried region in The depletion in the off state forms a charge balance structure, and then leads the drain of the vertical device to the upper surface of the device through the N-buried layer and the N-trench to form a planar device, which can be better integrated in the circuit. Moreover, the trench gate field effect transistor with charge balance structure of the present invention has simple production process, relatively low cost and wide application range.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to the technical field of field effect transistors, and specifically refers to a trench gate field effect transistor with a charge balance structure and a manufacturing method thereof. Background technique [0002] With the rapid development of electronic information technology, especially the rapid development of fashion consumer electronics and portable products, the demand for power devices such as metal oxide semiconductor field effect transistors (MOSFETs) is increasing. MOSFETs are mainly divided into horizontal and vertical Two, the obvious advantage of the lateral MOSFET is its better integration, which can be more easily integrated into the process platform of the existing technology, but because its withstand voltage drift region is spread out on the surface, it shows its biggest shortcoming, occupying The larger the area, the area represents the cost, and the highe...

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Problems solved by technology

[0002] With the rapid development of electronic information technology, especially the rapid development of fashion consumer electronics and portable products, the demand for power devices such as metal oxide semiconductor field effect transistors (MOSFETs) is increasing. MOSFETs are mainly divided into horizontal and vertical Two, the obvious advantage of the lateral MOSFET is its better integration, which can be more easily integrated into the process platform of the existing technology, but because its withstand voltage drift region is spread out on the surface, it shows its biggest shortcoming, occupying The larger the area, the area represents the cost, and the higher the withstand voltage, the more obvious the disadvantage

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