Method for detecting change trend of crystal growth interface in real time in Czochralski method system

A technology of crystal growth and changing trend, applied in measurement devices, electromagnetic measurement devices, electric/magnetic profile/curvature measurement, etc., can solve problems such as limited field of view, observation hole size, inability to observe the growth interface, and inability to judge the growth interface.

Active Publication Date: 2021-09-28
SUN YAT SEN UNIV
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Problems solved by technology

[0004] However, none of the above three methods can effectively monitor the changes of the growth interface.
The field of view of the CCD method is often limited by the size of the observation hole, and since most crystals are opaque after melting, the growth interface cannot be observed thro

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  • Method for detecting change trend of crystal growth interface in real time in Czochralski method system
  • Method for detecting change trend of crystal growth interface in real time in Czochralski method system
  • Method for detecting change trend of crystal growth interface in real time in Czochralski method system

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[0057] Example 1

[0058] The method of the present invention is used in the method of growth of the homogenic acid lithium niobate crystal.

[0059] In general, lithically, lithium niobate crystals are divided into subsequent, shrinkage, shackles, equilaters, and several stages of ending. In this embodiment, the interference of the transistor diameter variation and the temperature change of the seed crystal temperature is more Good explanation of the method of the method of the present invention, in the equation stage, stopped pulling, changing the crystal rotation speed, and data obtained under this condition to describe the specific use of the present invention.

[0060] In this embodiment, the crystal to the equation phase is grown at a rotational speed of 3 mm / h. After entering the equation phase, the lift crystal is stopped. After about 1 hour, the surface of the crystal is stable, calculate the time difference of the GEMF data every 5 minutes, and the time difference is a...

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Abstract

The invention relates to a method for detecting the change trend of a crystal growth interface in real time in a Czochralski method system. The method comprises the following steps of in the crystal growth process, detecting the interface phase intrinsic electromotive force GEMF in real time, calculating the difference value or the ratio of the rising time and the falling time of the interface phase intrinsic electromotive force GEMF at intervals, and judging the change trend of the crystal growth interface in real time according to the difference value or the ratio. According to the method, the change of the growth interface is predicted based on the change of the relationship between the rising time and the falling time of the interface phase intrinsic electromotive force GEMF, and the change trend of the crystal growth interface can be timely and accurately detected.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a method for real-time detection of the crystal growth interface change trend in a pulling method system. Background technique [0002] The pulling method is a mature crystal growth method of the melt method. The (artificial) crystal grown by this method has a wide range of applications in various fields, such as the substrate of integrated circuits, solar panels for photovoltaic power generation, excitation media for lasers, particle The scintillator of the detector, and the surface acoustic wave filter, etc. In the process of crystal growth by pulling method, the shape of the growth interface has a crucial influence on the quality of the crystal. Generally, the interface can be divided into three types: flat, concave, and convex, and the flat interface is generally an ideal growth interface. However, due to the change of temperature field and crystal shape (diameter an...

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Application Information

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IPC IPC(8): G01N27/00G01B7/28
CPCG01N27/00G01B7/28Y02E10/50
Inventor 王彪王文佳朱允中
Owner SUN YAT SEN UNIV
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