Light-emitting device and preparation method thereof

Abstract

The invention provides a light-emitting device. The light-emitting device comprises a substrate, a first semiconductor layer, a light-emitting layer and a second semiconductor layer, wherein the first semiconductor layer, the light-emitting layer and the second semiconductor layer are stacked on the substrate. The light-emitting layer comprises light-emitting units which are periodically overlapped, each light-emitting unit comprises an indium-containing quantum well layer, a quantum barrier layer and an indium-containing insertion layer, the indium-containing insertion layer is clamped between the indium-containing quantum well layer and the quantum barrier layer, and the content of the indium element in the indium-containing insertion layer is larger than that of the indium element in the indium-containing quantum well layer. According to the invention, the structural design is carried out on the light-emitting layer, and the indium-containing insertion layer containing the indium component proportion is added into the light-emitting unit, so that the strong polarization electric field in the light-emitting unit is relieved, the influence of the polarization electric field in the light-emitting layer is reduced, the wave function overlapping of electron holes is increased, and the carrier radiation recombination efficiency is improved; and the light-emitting efficiency of the light-emitting device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting device and a preparation method thereof. Background technique [0002] InGaN multiple quantum wells have achieved great success as high-efficiency active regions in light-emitting diodes (Light-Emitting Diode, LED) and laser diodes (Laser Diode). And a light emitting diode is a semiconductor electronic device that converts electrical energy into light energy. When a current flows through the light-emitting diode, the electrons and holes inside it recombine in the light-emitting layer to emit monochromatic light. [0003] However, since there is a spontaneous polarization (Spontaneous polarization) electric field in the first semiconductor layer grown on the substrate in the light-emitting diode, a lattice mismatch will be formed between the light-emitting layer and the first semiconductor layer to form a piezoelectric electrode Piezoelectric polarization...

AI Technical Summary

Problems solved by technology

The existence of the polarization electric field will make the energy band of the light-emitting layer tilt, the electron and hole wave functions will overlap in space, and the probability of radiative recombination will decrease, so that the quantum efficiency in the light-emitting diode will decrease. At the same time, due to the existence of the polarization electric field , when the current changes, the peak wavelength will shift, which will cause the display color difference

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