Full subtracter applying MTJ

Abstract

The invention relates to a full subtractor applying an MTJ, which solves the problem that the writing power consumption is increased due to a mode of adding an MOS tube in a power supply voltage direction when the MTJ of the full subtractor is written at any time in the prior art, and belongs to the technical field of electronic circuits. The invention discloses a full subtractor applying an MTJ. The full subtractor comprises a one-bit full subtractor, two write-in circuits and two clock logic control circuits, clock signals output by the two clock logic control circuits are simultaneously sent to the two write-in circuits; the clock logic control circuits are realized by NOR gate circuits; three inputs of the clock logic control circuit comprise a full subtractor work clock, a forward / reverse write-in enable control signal and a forward / reverse write-in input clock signal. The clock of the write-in circuit is controlled by adding the control gate, the number of MOS tubes in the clock power supply voltage direction of the write-in circuit is reduced, and the purpose of reducing write-in power consumption is achieved.

Description

technical field [0001] The invention relates to a total subtractor, in particular to a total subtractor using MTJ, and belongs to the technical field of electronic circuits. Background technique [0002] The further development of mobile communication technology puts forward higher requirements on the performance and power consumption of the analog-to-digital conversion circuit at the signal receiving end. In order to improve the performance of an analog-to-digital converter (Analog to Digital Converter, ADC), it becomes a promising design direction to apply a new memory device in a digital correction circuit. With the further evolution of integrated circuit manufacturing technology, the development of memory also encounters bottlenecks. At present, traditional memory has problems such as high power consumption, limited access speed, low storage density, and easy loss of storage. The spin-transfer torque magnetic random access memory (STT-MRAM) based on Magnetic Tunnel Jun...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the existing problem of increasing writing power consumption by adding MOS tubes in the power supply voltage direction when writing to the MTJ of the full subtractor at any time, the present invention provides a full subtractor using MTJ that saves power consumption

Images