A kind of semiconductor structure and its manufacturing method

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof, comprising: providing a substrate, the substrate including a logic region and a storage region; sequentially forming a first semiconductor layer and a second semiconductor layer on the substrate; and Forming a first trench isolation structure on the logic area, forming a second trench isolation structure on the storage area; removing the second semiconductor layer, and lining the storage area and the logic area performing ion implantation on the bottom respectively to form a first-type well and a second-type well; then depositing a third semiconductor layer on the first semiconductor layer on the logic region, and removing the first semiconductor layer and the first semiconductor layer The third semiconductor layer is formed to form a first recess and a second recess with different depths, and the first recess is smaller than the second recess. The quality of the semiconductor structure can be improved through the semiconductor structure and its manufacturing method provided by the invention.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor structure. Background technique [0002] Multiple blocks are usually set on a semiconductor integrated circuit, and because each block has a different function, different threshold voltages need to be set. A semiconductor integrated circuit is, for example, a memory device, and includes a logic area for executing a process, and a storage area for storing data. [0003] When manufacturing semiconductor integrated circuits, removing the semiconductor layer on the substrate will form a depression between the substrate and the shallow trench, and the depth of the depression will affect the threshold voltage of the storage device. If the same process is performed on the logic area and the storage area of ​​the storage device, the finally obtained recesses have the same depth. In the logic area and the storage area, due t...

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Problems solved by technology

In the logic area and the storage area, due to the type of implanted ions in different areas and the sensitivity of processing, when the threshold voltage of the logic area reaches the standard, the threshold voltage of the storage area is quite different from the standard threshold voltage, which affects the final obtained semiconductor structure. the quality of

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